Spectroscopic fingerprints for charge localization in the organic semiconductor (DOEO)(4)[HgBr4]center dot TCE
(2015) In European Physical Journal B. Condensed Matter and Complex Systems 88(5).- Abstract
- Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the organic semiconductor (DOEO)(4)[HgBr4]center dot TCE. Localization starts in the temperature region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of inclusions (droplets), and individual paramagnetic centers formed by localized holes and free charge carriers at 2 K. Two types of inclusions of 100-400 nm and 2-5 nm sizes were revealed by transmission electron microscopy. Studying the temperatureand angular dependence of electron spin resonance (ESR) spectra revealed fingerprints of antiferromagnetic contributions as well... (More)
- Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the organic semiconductor (DOEO)(4)[HgBr4]center dot TCE. Localization starts in the temperature region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of inclusions (droplets), and individual paramagnetic centers formed by localized holes and free charge carriers at 2 K. Two types of inclusions of 100-400 nm and 2-5 nm sizes were revealed by transmission electron microscopy. Studying the temperatureand angular dependence of electron spin resonance (ESR) spectra revealed fingerprints of antiferromagnetic contributions as well as paramagnetic resonance spectra of individual localized charge carriers. The results point on coexistence of antiferromagnetic long and short range order as evident from a second ESR line. Photoelectron spectroscopy in the VUV, soft and hard X-ray range shows temperature-dependent effects upon crossing the critical temperatures around 60 K and 150 K. The substantially different probing depths of soft and hard X-ray photoelectron spectroscopy yield information on the surface termination. The combined investigation using complementary methods at the same sample reveals the close relation of changes in the transport properties and in the energy distribution of electronic states. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/7426318
- author
- Koplak, Oksana V. ; Chernenkaya, Alisa ; Medjanik, Katerina LU ; Brambilla, Alberto ; Gloskovskii, Andrei ; Calloni, Alberto ; Elmers, Hans-Joachim ; Schoenhense, Gerd ; Ciccacci, Franco and Morgunov, Roman B.
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- European Physical Journal B. Condensed Matter and Complex Systems
- volume
- 88
- issue
- 5
- article number
- 120
- publisher
- Springer
- external identifiers
-
- wos:000354198500013
- scopus:84929012381
- ISSN
- 1434-6028
- DOI
- 10.1140/epjb/e2015-50837-7
- language
- English
- LU publication?
- yes
- id
- aa1e572a-0dc2-470c-bba4-02001a42fcb8 (old id 7426318)
- date added to LUP
- 2016-04-01 14:55:51
- date last changed
- 2023-01-11 14:41:17
@article{aa1e572a-0dc2-470c-bba4-02001a42fcb8,
abstract = {{Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the organic semiconductor (DOEO)(4)[HgBr4]center dot TCE. Localization starts in the temperature region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of inclusions (droplets), and individual paramagnetic centers formed by localized holes and free charge carriers at 2 K. Two types of inclusions of 100-400 nm and 2-5 nm sizes were revealed by transmission electron microscopy. Studying the temperatureand angular dependence of electron spin resonance (ESR) spectra revealed fingerprints of antiferromagnetic contributions as well as paramagnetic resonance spectra of individual localized charge carriers. The results point on coexistence of antiferromagnetic long and short range order as evident from a second ESR line. Photoelectron spectroscopy in the VUV, soft and hard X-ray range shows temperature-dependent effects upon crossing the critical temperatures around 60 K and 150 K. The substantially different probing depths of soft and hard X-ray photoelectron spectroscopy yield information on the surface termination. The combined investigation using complementary methods at the same sample reveals the close relation of changes in the transport properties and in the energy distribution of electronic states.}},
author = {{Koplak, Oksana V. and Chernenkaya, Alisa and Medjanik, Katerina and Brambilla, Alberto and Gloskovskii, Andrei and Calloni, Alberto and Elmers, Hans-Joachim and Schoenhense, Gerd and Ciccacci, Franco and Morgunov, Roman B.}},
issn = {{1434-6028}},
language = {{eng}},
number = {{5}},
publisher = {{Springer}},
series = {{European Physical Journal B. Condensed Matter and Complex Systems}},
title = {{Spectroscopic fingerprints for charge localization in the organic semiconductor (DOEO)(4)[HgBr4]center dot TCE}},
url = {{http://dx.doi.org/10.1140/epjb/e2015-50837-7}},
doi = {{10.1140/epjb/e2015-50837-7}},
volume = {{88}},
year = {{2015}},
}