Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation
(2020) In ACS Applied Materials and Interfaces 12(25). p.28360-28367- Abstract
As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump-THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of... (More)
As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump-THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of hours, while it is effectively inhibited by surface nitridation. Our study demonstrates that surface nitridation stabilizes the GaAs surface via reduction of both electron- and hole-trapping rates, which results in chemical and electronical passivation of the bulk GaAs surface.
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- author
- Zou, Xianshao LU ; Li, Chuanshuai LU ; Su, Xiaojun LU ; Liu, Yuchen LU ; Finkelstein-Shapiro, Daniel LU ; Zhang, Wei LU and Yartsev, Arkady LU
- organization
- publishing date
- 2020
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- charge trapping, GaAs, surface passivation, surface recombination velocity, time-resolved spectroscopy
- in
- ACS Applied Materials and Interfaces
- volume
- 12
- issue
- 25
- pages
- 8 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85087110716
- pmid:32469493
- ISSN
- 1944-8244
- DOI
- 10.1021/acsami.0c04892
- language
- English
- LU publication?
- yes
- id
- 7970e872-4d65-48a4-8bc9-a98c68d8c4c2
- date added to LUP
- 2020-07-07 12:14:06
- date last changed
- 2024-08-21 23:52:23
@article{7970e872-4d65-48a4-8bc9-a98c68d8c4c2, abstract = {{<p>As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump-THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of hours, while it is effectively inhibited by surface nitridation. Our study demonstrates that surface nitridation stabilizes the GaAs surface via reduction of both electron- and hole-trapping rates, which results in chemical and electronical passivation of the bulk GaAs surface.</p>}}, author = {{Zou, Xianshao and Li, Chuanshuai and Su, Xiaojun and Liu, Yuchen and Finkelstein-Shapiro, Daniel and Zhang, Wei and Yartsev, Arkady}}, issn = {{1944-8244}}, keywords = {{charge trapping; GaAs; surface passivation; surface recombination velocity; time-resolved spectroscopy}}, language = {{eng}}, number = {{25}}, pages = {{28360--28367}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Applied Materials and Interfaces}}, title = {{Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation}}, url = {{http://dx.doi.org/10.1021/acsami.0c04892}}, doi = {{10.1021/acsami.0c04892}}, volume = {{12}}, year = {{2020}}, }