Self-Limiting Polymer Exposure for Vertical Processing of Semiconductor Nanowire-Based Flexible Electronics
(2020) In ACS Applied Nano Materials 3(8). p.7743-7749- Abstract
In this work, we demonstrate a vertical processing method to fabricate nanowire (NW)-based devices. This method combines the strong light absorption ability caused by the NW geometry and exposure to dose-dependent clearance properties of a photo-sensitive polymer. By embedding NW arrays in a polymer, the NW light absorption leads to self-limited exposure and selective removal of the polymer. This optical and self-limited exposure pattern definition method can replace more expensive processing equipment, such as reactive ion etching and the use of a mask aligner. Excitingly, this method can be used to enable peel-off of NW arrays from their parent substrate, opening up opportunities to fabricate flexible NW array devices.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/7d90ecc4-9b16-4b93-acf6-ae82814e356a
- author
- Zhang, Yuwei LU ; Hrachowina, Lukas LU ; Barrigon, Enrique LU ; Åberg, Ingvar and Borgström, Magnus LU
- organization
- publishing date
- 2020
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanowire, nanowire vertical device, peel-off, polymer processing, self-limiting exposure
- in
- ACS Applied Nano Materials
- volume
- 3
- issue
- 8
- pages
- 7 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85092268032
- ISSN
- 2574-0970
- DOI
- 10.1021/acsanm.0c01314
- language
- English
- LU publication?
- yes
- id
- 7d90ecc4-9b16-4b93-acf6-ae82814e356a
- date added to LUP
- 2020-11-04 06:56:02
- date last changed
- 2023-11-20 13:37:10
@article{7d90ecc4-9b16-4b93-acf6-ae82814e356a, abstract = {{<p>In this work, we demonstrate a vertical processing method to fabricate nanowire (NW)-based devices. This method combines the strong light absorption ability caused by the NW geometry and exposure to dose-dependent clearance properties of a photo-sensitive polymer. By embedding NW arrays in a polymer, the NW light absorption leads to self-limited exposure and selective removal of the polymer. This optical and self-limited exposure pattern definition method can replace more expensive processing equipment, such as reactive ion etching and the use of a mask aligner. Excitingly, this method can be used to enable peel-off of NW arrays from their parent substrate, opening up opportunities to fabricate flexible NW array devices. </p>}}, author = {{Zhang, Yuwei and Hrachowina, Lukas and Barrigon, Enrique and Åberg, Ingvar and Borgström, Magnus}}, issn = {{2574-0970}}, keywords = {{nanowire; nanowire vertical device; peel-off; polymer processing; self-limiting exposure}}, language = {{eng}}, number = {{8}}, pages = {{7743--7749}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Applied Nano Materials}}, title = {{Self-Limiting Polymer Exposure for Vertical Processing of Semiconductor Nanowire-Based Flexible Electronics}}, url = {{http://dx.doi.org/10.1021/acsanm.0c01314}}, doi = {{10.1021/acsanm.0c01314}}, volume = {{3}}, year = {{2020}}, }