Chalcogen Impurities in Silicon
(2024) p.87-176- Abstract
If an atom of the host lattice in silicon is replaced by an atom belonging to the fifth group in the periodic table, the potential binding the extra electron to the impurity atom can, in most cases, be approximated by a hydrogen-like potential. 1 This gives rise not only to an energy level in the band gap for the impurity ground state, but, in addition, also to a series of excited states. In silicon, the ground-state energies of these impurities are of the order of 50 meV. Such centers are therefore called “shallow” impurities, and are widely used in semiconductor technology for modifying the type and degree of electrical conductivity. The energy levels of the excited states are almost independent of the ground-state energies and well... (More)
If an atom of the host lattice in silicon is replaced by an atom belonging to the fifth group in the periodic table, the potential binding the extra electron to the impurity atom can, in most cases, be approximated by a hydrogen-like potential. 1 This gives rise not only to an energy level in the band gap for the impurity ground state, but, in addition, also to a series of excited states. In silicon, the ground-state energies of these impurities are of the order of 50 meV. Such centers are therefore called “shallow” impurities, and are widely used in semiconductor technology for modifying the type and degree of electrical conductivity. The energy levels of the excited states are almost independent of the ground-state energies and well described by effective mass theory (EMT). 2, 3, 4, 71 That these excited states are indeed so well described by EMT is one of the reasons for our good understanding of shallow centers. The assignment of these levels and of the ground states has been considerably facilitated by the fact that optical absorption spectra generally exhibit a number of sharp lines.
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- author
- Grimmeiss, H. G. LU and Janzen, E.
- organization
- publishing date
- 2024
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Deep Centers in Semiconductors : a State-of-the-Art approach, Second Edition - a State-of-the-Art approach, Second Edition
- edition
- 2nd
- pages
- 90 pages
- publisher
- CRC Press/Balkema
- external identifiers
-
- scopus:85214614240
- ISBN
- 9782881245626
- 9781040286043
- DOI
- 10.4324/9781003580409-2
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 1986, 1992 by Taylor & Francis Group, LLC.
- id
- 833e70f7-df90-459a-8874-c84b52347e13
- date added to LUP
- 2025-02-24 14:03:07
- date last changed
- 2025-07-15 01:32:31
@inbook{833e70f7-df90-459a-8874-c84b52347e13,
abstract = {{<p>If an atom of the host lattice in silicon is replaced by an atom belonging to the fifth group in the periodic table, the potential binding the extra electron to the impurity atom can, in most cases, be approximated by a hydrogen-like potential. 1 This gives rise not only to an energy level in the band gap for the impurity ground state, but, in addition, also to a series of excited states. In silicon, the ground-state energies of these impurities are of the order of 50 meV. Such centers are therefore called “shallow” impurities, and are widely used in semiconductor technology for modifying the type and degree of electrical conductivity. The energy levels of the excited states are almost independent of the ground-state energies and well described by effective mass theory (EMT). 2, 3, 4, 71 That these excited states are indeed so well described by EMT is one of the reasons for our good understanding of shallow centers. The assignment of these levels and of the ground states has been considerably facilitated by the fact that optical absorption spectra generally exhibit a number of sharp lines.</p>}},
author = {{Grimmeiss, H. G. and Janzen, E.}},
booktitle = {{Deep Centers in Semiconductors : a State-of-the-Art approach, Second Edition}},
isbn = {{9782881245626}},
language = {{eng}},
pages = {{87--176}},
publisher = {{CRC Press/Balkema}},
title = {{Chalcogen Impurities in Silicon}},
url = {{http://dx.doi.org/10.4324/9781003580409-2}},
doi = {{10.4324/9781003580409-2}},
year = {{2024}},
}