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Sb Incorporation in Wurtzite and Zinc Blende InAs1-xSbx Branches on InAs Template Nanowires

Dahl, Magnus LU ; Namazi, Luna LU ; Zamani, Reza R. LU and Dick, Kimberly A. LU (2018) In Small 14(11).
Abstract

The physical properties of material largely depend on their crystal structure. Nanowire growth is an important method for attaining metastable crystal structures in III-V semiconductors, giving access to advantageous electronic and surface properties. Antimonides are an exception, as growing metastable wurtzite structure has proven to be challenging. As a result, the properties of these materials remain unknown. One promising means of accessing wurtzite antimonides is to use a wurtzite template to facilitate their growth. Here, a template technique using branched nanowire growth for realizing wurtzite antimonide material is demonstrated. On wurtzite InAs trunks, InAs1-xSbx branch nanowires at different... (More)

The physical properties of material largely depend on their crystal structure. Nanowire growth is an important method for attaining metastable crystal structures in III-V semiconductors, giving access to advantageous electronic and surface properties. Antimonides are an exception, as growing metastable wurtzite structure has proven to be challenging. As a result, the properties of these materials remain unknown. One promising means of accessing wurtzite antimonides is to use a wurtzite template to facilitate their growth. Here, a template technique using branched nanowire growth for realizing wurtzite antimonide material is demonstrated. On wurtzite InAs trunks, InAs1-xSbx branch nanowires at different Sb vapor phase compositions are grown. For comparison, branches on zinc blende nanowire trunks are also grown under identical conditions. Studying the crystal structure and the material composition of the grown branches at different xv shows that the Sb incorporation is higher in zinc blende than in wurtzite. Branches grown on wurtzite trunks are usually correlated with stacking defects in the trunk, leading to the emergence of a zinc blende segment of higher Sb content growing parallel to the wurtzite structure within a branch. However, the average amount of Sb incorporated within the branch is determined by the vapor phase composition.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Antimonide, Au seeded, Branched nanowires, InAsSb, Wurtzite
in
Small
volume
14
issue
11
article number
1703785
publisher
John Wiley & Sons Inc.
external identifiers
  • pmid:29377459
  • scopus:85041122862
ISSN
1613-6810
DOI
10.1002/smll.201703785
language
English
LU publication?
yes
id
aef7780d-fad0-49fd-a2ff-648bc19b3d27
date added to LUP
2018-03-28 13:10:43
date last changed
2024-06-24 12:12:58
@article{aef7780d-fad0-49fd-a2ff-648bc19b3d27,
  abstract     = {{<p>The physical properties of material largely depend on their crystal structure. Nanowire growth is an important method for attaining metastable crystal structures in III-V semiconductors, giving access to advantageous electronic and surface properties. Antimonides are an exception, as growing metastable wurtzite structure has proven to be challenging. As a result, the properties of these materials remain unknown. One promising means of accessing wurtzite antimonides is to use a wurtzite template to facilitate their growth. Here, a template technique using branched nanowire growth for realizing wurtzite antimonide material is demonstrated. On wurtzite InAs trunks, InAs<sub>1-</sub><sub>x</sub>Sb<sub>x</sub> branch nanowires at different Sb vapor phase compositions are grown. For comparison, branches on zinc blende nanowire trunks are also grown under identical conditions. Studying the crystal structure and the material composition of the grown branches at different x<sub>v</sub> shows that the Sb incorporation is higher in zinc blende than in wurtzite. Branches grown on wurtzite trunks are usually correlated with stacking defects in the trunk, leading to the emergence of a zinc blende segment of higher Sb content growing parallel to the wurtzite structure within a branch. However, the average amount of Sb incorporated within the branch is determined by the vapor phase composition.</p>}},
  author       = {{Dahl, Magnus and Namazi, Luna and Zamani, Reza R. and Dick, Kimberly A.}},
  issn         = {{1613-6810}},
  keywords     = {{Antimonide; Au seeded; Branched nanowires; InAsSb; Wurtzite}},
  language     = {{eng}},
  number       = {{11}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Small}},
  title        = {{Sb Incorporation in Wurtzite and Zinc Blende InAs<sub>1-</sub><sub>x</sub>Sb<sub>x</sub> Branches on InAs Template Nanowires}},
  url          = {{http://dx.doi.org/10.1002/smll.201703785}},
  doi          = {{10.1002/smll.201703785}},
  volume       = {{14}},
  year         = {{2018}},
}