Sulfonated Dopant-Free Hole-Transport Material Promotes Interfacial Charge Transfer Dynamics for Highly Stable Perovskite Solar Cells
(2021) In Advanced Sustainable Systems 5(12).- Abstract
The integration of a functional group into dopant-free hole-transport materials (HTMs) to modify the perovskite|HTM interface has become a promising strategy for high-performance and stable perovskite solar cells (PSCs). In this work, a sulfonated phenothiazine-based HTM is reported, namely TAS, which consists of a butterfly structure with a readily synthesized N,N-bis[4-(methylthio)phenyl]aniline side functional group. The interaction between TAS and perovskite via Pb–S bond induces a dipole moment that deepens the valence band of perovskite and thereby leads to enhanced open-circuit voltage in corresponding n-i-p PSCs. More importantly, the functionalization of perovskite surface via Pb–S bond promotes the hole extraction... (More)
The integration of a functional group into dopant-free hole-transport materials (HTMs) to modify the perovskite|HTM interface has become a promising strategy for high-performance and stable perovskite solar cells (PSCs). In this work, a sulfonated phenothiazine-based HTM is reported, namely TAS, which consists of a butterfly structure with a readily synthesized N,N-bis[4-(methylthio)phenyl]aniline side functional group. The interaction between TAS and perovskite via Pb–S bond induces a dipole moment that deepens the valence band of perovskite and thereby leads to enhanced open-circuit voltage in corresponding n-i-p PSCs. More importantly, the functionalization of perovskite surface via Pb–S bond promotes the hole extraction reaction while suppressing the interfacial non-radiative recombination, contributing to a 20–50% performance improvement compared to less- (4-(methylthio)-N-[4-(methylthio)phenyl]aniline, DAS) or non-interacting (N,N-bis(4-methoxyphenyl)aniline, TAO) counterparts. Consequently, TAS-based PSCs exhibit superior device stability with a high PCE retention (>90% of the initial value) after 125 days of storage in the air.
(Less)
- author
- Li, Rui LU ; Liu, Maning LU ; Matta, Sri Kasi ; Hiltunen, Arto ; Deng, Zhifeng ; Wang, Cheng ; Dai, Zhicheng ; Russo, Salvy P. ; Vivo, Paola and Zhang, Haichang
- publishing date
- 2021-12
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- charge transfer dynamics, hole-transport material, interfacial modification, Pb–S bond, perovskite solar cells, stability
- in
- Advanced Sustainable Systems
- volume
- 5
- issue
- 12
- article number
- 2100244
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- scopus:85114675190
- DOI
- 10.1002/adsu.202100244
- language
- English
- LU publication?
- no
- id
- e1bdbf4a-c27c-415b-83f9-9347678997e5
- date added to LUP
- 2023-08-24 12:23:16
- date last changed
- 2023-08-25 14:05:58
@article{e1bdbf4a-c27c-415b-83f9-9347678997e5, abstract = {{<p>The integration of a functional group into dopant-free hole-transport materials (HTMs) to modify the perovskite|HTM interface has become a promising strategy for high-performance and stable perovskite solar cells (PSCs). In this work, a sulfonated phenothiazine-based HTM is reported, namely TAS, which consists of a butterfly structure with a readily synthesized N,N-bis[4-(methylthio)phenyl]aniline side functional group. The interaction between TAS and perovskite via Pb–S bond induces a dipole moment that deepens the valence band of perovskite and thereby leads to enhanced open-circuit voltage in corresponding n-i-p PSCs. More importantly, the functionalization of perovskite surface via Pb–S bond promotes the hole extraction reaction while suppressing the interfacial non-radiative recombination, contributing to a 20–50% performance improvement compared to less- (4-(methylthio)-N-[4-(methylthio)phenyl]aniline, DAS) or non-interacting (N,N-bis(4-methoxyphenyl)aniline, TAO) counterparts. Consequently, TAS-based PSCs exhibit superior device stability with a high PCE retention (>90% of the initial value) after 125 days of storage in the air.</p>}}, author = {{Li, Rui and Liu, Maning and Matta, Sri Kasi and Hiltunen, Arto and Deng, Zhifeng and Wang, Cheng and Dai, Zhicheng and Russo, Salvy P. and Vivo, Paola and Zhang, Haichang}}, keywords = {{charge transfer dynamics; hole-transport material; interfacial modification; Pb–S bond; perovskite solar cells; stability}}, language = {{eng}}, number = {{12}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Advanced Sustainable Systems}}, title = {{Sulfonated Dopant-Free Hole-Transport Material Promotes Interfacial Charge Transfer Dynamics for Highly Stable Perovskite Solar Cells}}, url = {{http://dx.doi.org/10.1002/adsu.202100244}}, doi = {{10.1002/adsu.202100244}}, volume = {{5}}, year = {{2021}}, }