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From Transistors to Phototransistors by Tailoring the Polymer Stacking

Cui, Shuaiwei ; Liang, Dongxu ; Liu, Maning LU orcid ; Vivo, Paola ; Zheng, Meng ; Zhuang, Tao ; Sun, Qikun ; Yang, Wenjun and Zhang, Haichang (2022) In Advanced Electronic Materials 8(9).
Abstract

It is universally acknowledged that highly photosensitive transistors are strongly dependent on the high carrier mobility of polymer-based semiconductors. However, the polymer π–π stacking and aggregation, required to increase the charge mobility, conversely inhibit the dissociation of photogenerated charge carriers, in turn accelerating the geminate recombination of electron-hole pairs. To explore the effects of charge mobility and polymer stacking on the photoresponsivity of the phototransistors, here, two alternating copolymers are synthesized, namely P-PPAB-IDT and P-PPAB-BDT, by palladium-catalyzed Stille coupling of PPAB with indaceodithiophene (IDT) or benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl) (BDT) monomers. The polymer... (More)

It is universally acknowledged that highly photosensitive transistors are strongly dependent on the high carrier mobility of polymer-based semiconductors. However, the polymer π–π stacking and aggregation, required to increase the charge mobility, conversely inhibit the dissociation of photogenerated charge carriers, in turn accelerating the geminate recombination of electron-hole pairs. To explore the effects of charge mobility and polymer stacking on the photoresponsivity of the phototransistors, here, two alternating copolymers are synthesized, namely P-PPAB-IDT and P-PPAB-BDT, by palladium-catalyzed Stille coupling of PPAB with indaceodithiophene (IDT) or benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl) (BDT) monomers. The polymer P-PPAB-IDT demonstrates a nearly 20 times enhancement in the hole mobility compared to P-PPAB-BDT. Yet, P-PPAB-IDT surprisingly shows no response to white light illumination, whereas P-PPAB-BDT exhibits a significant photoresponse to the same light source with a high light-current/dark-current (Ilight/Idark) ratio of 21.6 in the p-type area and a low current ratio of just 5.2 in the n-type area. It is believed that this work will provide an effective strategy to develop highly photosensitive polymer semiconductors by reducing polymer stacking and aggregation rather than improving the charge carrier mobility.

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author
; ; ; ; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
subject
keywords
aggregation, charge transport mobility, organic field-effect transistors, phototransistors, polymer stacking
in
Advanced Electronic Materials
volume
8
issue
9
article number
2200019
publisher
Wiley-Blackwell
external identifiers
  • scopus:85130611462
ISSN
2199-160X
DOI
10.1002/aelm.202200019
language
English
LU publication?
no
id
ed925c78-bfac-4a08-bb06-8cf2ea90c360
date added to LUP
2023-08-24 12:19:13
date last changed
2023-08-25 11:08:59
@article{ed925c78-bfac-4a08-bb06-8cf2ea90c360,
  abstract     = {{<p>It is universally acknowledged that highly photosensitive transistors are strongly dependent on the high carrier mobility of polymer-based semiconductors. However, the polymer π–π stacking and aggregation, required to increase the charge mobility, conversely inhibit the dissociation of photogenerated charge carriers, in turn accelerating the geminate recombination of electron-hole pairs. To explore the effects of charge mobility and polymer stacking on the photoresponsivity of the phototransistors, here, two alternating copolymers are synthesized, namely P-PPAB-IDT and P-PPAB-BDT, by palladium-catalyzed Stille coupling of PPAB with indaceodithiophene (IDT) or benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl) (BDT) monomers. The polymer P-PPAB-IDT demonstrates a nearly 20 times enhancement in the hole mobility compared to P-PPAB-BDT. Yet, P-PPAB-IDT surprisingly shows no response to white light illumination, whereas P-PPAB-BDT exhibits a significant photoresponse to the same light source with a high light-current/dark-current (I<sub>light</sub>/I<sub>dark</sub>) ratio of 21.6 in the p-type area and a low current ratio of just 5.2 in the n-type area. It is believed that this work will provide an effective strategy to develop highly photosensitive polymer semiconductors by reducing polymer stacking and aggregation rather than improving the charge carrier mobility.</p>}},
  author       = {{Cui, Shuaiwei and Liang, Dongxu and Liu, Maning and Vivo, Paola and Zheng, Meng and Zhuang, Tao and Sun, Qikun and Yang, Wenjun and Zhang, Haichang}},
  issn         = {{2199-160X}},
  keywords     = {{aggregation; charge transport mobility; organic field-effect transistors; phototransistors; polymer stacking}},
  language     = {{eng}},
  number       = {{9}},
  publisher    = {{Wiley-Blackwell}},
  series       = {{Advanced Electronic Materials}},
  title        = {{From Transistors to Phototransistors by Tailoring the Polymer Stacking}},
  url          = {{http://dx.doi.org/10.1002/aelm.202200019}},
  doi          = {{10.1002/aelm.202200019}},
  volume       = {{8}},
  year         = {{2022}},
}