Graphene Ribbon Growth on Structured Silicon Carbide
(2017) In Annalen der Physik 529(11).- Abstract
Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The... (More)
Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES).
(Less)
- author
- organization
- publishing date
- 2017-11-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- AFM, ARPES, Epitaxial graphene, Facets, LEEM, Nanoribbons, Side walls, Silicon carbide
- in
- Annalen der Physik
- volume
- 529
- issue
- 11
- article number
- 1700052
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- wos:000414808800017
- scopus:85034111922
- ISSN
- 0003-3804
- DOI
- 10.1002/andp.201700052
- language
- English
- LU publication?
- yes
- id
- f49753a1-9244-4ea8-8db9-25edac27d22b
- date added to LUP
- 2017-12-08 10:21:37
- date last changed
- 2024-10-14 19:07:10
@article{f49753a1-9244-4ea8-8db9-25edac27d22b, abstract = {{<p>Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES).</p>}}, author = {{Stöhr, Alexander and Baringhaus, Jens and Aprojanz, Johannes and Link, Stefan and Tegenkamp, Christoph and Niu, Yuran and Zakharov, Alexei A. and Chen, Chaoyu and Avila, José and Asensio, Maria C. and Starke, Ulrich}}, issn = {{0003-3804}}, keywords = {{AFM; ARPES; Epitaxial graphene; Facets; LEEM; Nanoribbons; Side walls; Silicon carbide}}, language = {{eng}}, month = {{11}}, number = {{11}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Annalen der Physik}}, title = {{Graphene Ribbon Growth on Structured Silicon Carbide}}, url = {{http://dx.doi.org/10.1002/andp.201700052}}, doi = {{10.1002/andp.201700052}}, volume = {{529}}, year = {{2017}}, }