Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Formation of self-assembled Gd2O3 nanowire-like structures during epitaxial growth on Si(001).

Gribisch, Philipp LU orcid and Fissel, Andreas (2021) In RSC Advances 11(29). p.17526-17536
Abstract

The structural and morphological properties of gadolinium oxide (Gd 2O 3) grown at high temperatures with molecular beam epitaxy on Si(001) were investigated for different stages of growth. The Gd 2O 3 layers were grown at 850 °C with different oxygen partial pressures and substrate miscuts. RHEED and XRD investigations indicate an initial formation of silicide and a subsequent transformation into cubic Gd 2O 3 with (110) orientation. The surface exhibits nanowire-like structures oriented orthogonally along with the [110] directions of the substrate, as indicated by AFM. Since on 4° off-cut Si(001) substrates the nanowire-like structures are mainly oriented in only one [110] direction, the orientation of the formed Gd 2O 3 structures... (More)

The structural and morphological properties of gadolinium oxide (Gd 2O 3) grown at high temperatures with molecular beam epitaxy on Si(001) were investigated for different stages of growth. The Gd 2O 3 layers were grown at 850 °C with different oxygen partial pressures and substrate miscuts. RHEED and XRD investigations indicate an initial formation of silicide and a subsequent transformation into cubic Gd 2O 3 with (110) orientation. The surface exhibits nanowire-like structures oriented orthogonally along with the [110] directions of the substrate, as indicated by AFM. Since on 4° off-cut Si(001) substrates the nanowire-like structures are mainly oriented in only one [110] direction, the orientation of the formed Gd 2O 3 structures seems to be related to the dimer orientation of the (2 × 1) reconstructed Si(001) surface. The density and length of the nanowire-like structures can be tuned by a change in oxygen partial pressure. The results were discussed in terms of different physical effects, where a combination of desorption of silicon and the formation of a silicide layer in the initial stage of growth could be the reason for the growth behaviour, which is also supported through TEM investigations.

(Less)
Please use this url to cite or link to this publication:
author
and
publishing date
type
Contribution to journal
publication status
published
subject
in
RSC Advances
volume
11
issue
29
pages
11 pages
publisher
Royal Society of Chemistry
external identifiers
  • pmid:35480161
  • scopus:85106425454
ISSN
2046-2069
DOI
10.1039/d1ra00476j
language
English
LU publication?
no
additional info
This journal is © The Royal Society of Chemistry.
id
f70f1c3d-1460-4d7b-a574-29d7ed3e25fe
date added to LUP
2022-12-09 15:01:57
date last changed
2025-04-04 15:22:39
@article{f70f1c3d-1460-4d7b-a574-29d7ed3e25fe,
  abstract     = {{<p>The structural and morphological properties of gadolinium oxide (Gd 2O 3) grown at high temperatures with molecular beam epitaxy on Si(001) were investigated for different stages of growth. The Gd 2O 3 layers were grown at 850 °C with different oxygen partial pressures and substrate miscuts. RHEED and XRD investigations indicate an initial formation of silicide and a subsequent transformation into cubic Gd  2O 3 with (110) orientation. The surface exhibits nanowire-like structures oriented orthogonally along with the [110] directions of the substrate, as indicated by AFM. Since on 4° off-cut Si(001) substrates the nanowire-like structures are mainly oriented in only one [110] direction, the orientation of the formed Gd 2O 3 structures seems to be related to the dimer orientation of the (2 × 1) reconstructed Si(001) surface. The density and length of the nanowire-like structures can be tuned by a change in oxygen partial pressure. The results were discussed in terms of different physical effects, where a combination of desorption of silicon and the formation of a silicide layer in the initial stage of growth could be the reason for the growth behaviour, which is also supported through TEM investigations. </p>}},
  author       = {{Gribisch, Philipp and Fissel, Andreas}},
  issn         = {{2046-2069}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{29}},
  pages        = {{17526--17536}},
  publisher    = {{Royal Society of Chemistry}},
  series       = {{RSC Advances}},
  title        = {{Formation of self-assembled Gd2O3 nanowire-like structures during epitaxial growth on Si(001).}},
  url          = {{http://dx.doi.org/10.1039/d1ra00476j}},
  doi          = {{10.1039/d1ra00476j}},
  volume       = {{11}},
  year         = {{2021}},
}