Håkan Pettersson
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- 2014
-
Mark
InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
(
- Contribution to journal › Article
-
Mark
Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning
(
- Contribution to journal › Article
-
Mark
Study of photocurrent generation in InP nanowire-based p(+)-i-n(+) photodetectors
(
- Contribution to journal › Article
-
Mark
Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires
(
- Contribution to journal › Article
- 2009
-
Mark
Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2008
-
Mark
Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors
(
- Contribution to journal › Article
-
Mark
Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors
(
- Contribution to journal › Article
-
Mark
Assembling Ferromagnetic Single-electron Transistors with Atomic Force Microscopy
2008) p.29-40(
- Chapter in Book/Report/Conference proceeding › Book chapter
- 2006
-
Mark
Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors
(
- Contribution to journal › Article
- 1993
-
Mark
Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys
1993)(
- Thesis › Doctoral thesis (compilation)