Jesper Wallentin
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- 2012
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Mark
Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires.
2012) In ACS Nano(
- Contribution to journal › Article
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Mark
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
(
- Contribution to journal › Article
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Mark
Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
(
- Contribution to journal › Article
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Mark
Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.
(
- Contribution to journal › Article
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Mark
Doping of Semiconductor Nanowires
2012)(
- Thesis › Doctoral thesis (compilation)
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Mark
InP Nanowire mm2-sized Solar Cells with 3.8% Efficiency
2012) MRS Spring Meeting, 2012(
- Contribution to conference › Abstract
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Mark
A comparative study of nanowire-based infrared p+-i-n+ photodetectors
2012) ICPS 2012(
- Contribution to conference › Abstract
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Mark
GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
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Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults
2012) MRS Spring Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
Atomic Surface Structure and Electronic Properties of Semiconductor Nanowires Studied by Scanning Tunneling Microscopy and Spectroscopy
2012) ICPS 2012(
- Contribution to conference › Abstract