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Buried Interface evolution of 2D/3D heterojunction inverted perovskites solar cells

Zhang, Qian LU ; Chen, Yi LU ; Ma, Zhu LU ; Song, Mingli ; Du, Hao ; Li, Yixian ; Gou, Fuchun ; Du, Zhuowei ; Lv, Zhuo and Chen, Bo LU , et al. (2026) In Journal of Colloid and Interface Science 709.
Abstract

The instability of perovskite interfaces caused by interfacial defects and heterojunction evolution hinders the realization of long-term stable inverse perovskite solar cells (IPSCs). This work reports a strategy for the study of heterojunction evolution, the effects of buried interface and carrier dynamics on the stability of perovskite films and devices in 2D/3D heterojunctions. The emphasis is on selecting PEA ammonium salts of different halogens as the buried interface of perovskites and constructing heterojunction structures at the three-dimensional perovskite lower interface. By placing constructed heterojunction perovskite films on a constant temperature hotplate at 60 °C for long-term aging treatment, the changes in carrier... (More)

The instability of perovskite interfaces caused by interfacial defects and heterojunction evolution hinders the realization of long-term stable inverse perovskite solar cells (IPSCs). This work reports a strategy for the study of heterojunction evolution, the effects of buried interface and carrier dynamics on the stability of perovskite films and devices in 2D/3D heterojunctions. The emphasis is on selecting PEA ammonium salts of different halogens as the buried interface of perovskites and constructing heterojunction structures at the three-dimensional perovskite lower interface. By placing constructed heterojunction perovskite films on a constant temperature hotplate at 60 °C for long-term aging treatment, the changes in carrier behavior of heterojunction films were investigated. By exploring the evolution law of 2D perovskite and observing the buried interface, there are many PbI2 crystals in the perovskite grain boundary of initial perovskite thin film buried interface, and the number of lead iodide (PbI2) crystals decreases significantly after 15 days of aging. This study perfects the scientific theoretical system of the buried interface of mixed-dimensional semiconductor perovskite devices and lays a key technical foundation for the development of high-efficiency and long-life perovskite optoelectronic devices.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
2D/3D heterojunction, Buried interface evolution, Carrier dynamics, Inverted perovskites solar cells
in
Journal of Colloid and Interface Science
volume
709
article number
139874
publisher
Academic Press
external identifiers
  • pmid:41548466
  • scopus:105027563368
ISSN
0021-9797
DOI
10.1016/j.jcis.2026.139874
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2026 Elsevier Inc.
id
01f434ed-946a-4fcc-a9ee-0940157e746d
date added to LUP
2026-03-10 15:19:52
date last changed
2026-03-24 21:07:23
@article{01f434ed-946a-4fcc-a9ee-0940157e746d,
  abstract     = {{<p>The instability of perovskite interfaces caused by interfacial defects and heterojunction evolution hinders the realization of long-term stable inverse perovskite solar cells (IPSCs). This work reports a strategy for the study of heterojunction evolution, the effects of buried interface and carrier dynamics on the stability of perovskite films and devices in 2D/3D heterojunctions. The emphasis is on selecting PEA ammonium salts of different halogens as the buried interface of perovskites and constructing heterojunction structures at the three-dimensional perovskite lower interface. By placing constructed heterojunction perovskite films on a constant temperature hotplate at 60 °C for long-term aging treatment, the changes in carrier behavior of heterojunction films were investigated. By exploring the evolution law of 2D perovskite and observing the buried interface, there are many PbI<sub>2</sub> crystals in the perovskite grain boundary of initial perovskite thin film buried interface, and the number of lead iodide (PbI<sub>2</sub>) crystals decreases significantly after 15 days of aging. This study perfects the scientific theoretical system of the buried interface of mixed-dimensional semiconductor perovskite devices and lays a key technical foundation for the development of high-efficiency and long-life perovskite optoelectronic devices.</p>}},
  author       = {{Zhang, Qian and Chen, Yi and Ma, Zhu and Song, Mingli and Du, Hao and Li, Yixian and Gou, Fuchun and Du, Zhuowei and Lv, Zhuo and Chen, Bo and Yin, Qiaohuan and Li, Yi and Jiang, Jinming and Li, Yixuan and Yang, Yanhong and Hu, Huachuan and Xia, Zhengduo and Zhang, Fengying and Huang, Cheng and Xiang, Yan and Zheng, Yujie and Sun, Kuan and Chen, Jiangzhao and Zheng, Kaibo}},
  issn         = {{0021-9797}},
  keywords     = {{2D/3D heterojunction; Buried interface evolution; Carrier dynamics; Inverted perovskites solar cells}},
  language     = {{eng}},
  month        = {{01}},
  publisher    = {{Academic Press}},
  series       = {{Journal of Colloid and Interface Science}},
  title        = {{Buried Interface evolution of 2D/3D heterojunction inverted perovskites solar cells}},
  url          = {{http://dx.doi.org/10.1016/j.jcis.2026.139874}},
  doi          = {{10.1016/j.jcis.2026.139874}},
  volume       = {{709}},
  year         = {{2026}},
}