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Nano-Schottky Contacts Realized by Bottom-up Technique

Suyatin, Dmitry LU ; Trägårdh, Johanna LU ; Messing, Maria LU ; Wagner, Jakob LU ; Montelius, Lars LU ; Pettersson, H. and Samuelson, Lars LU (2010) 3rd IEEE International Nanoelectronics Conference p.252-253
Abstract
Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.
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author
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organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2
pages
252 - 253
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
3rd IEEE International Nanoelectronics Conference
conference location
Hong Kong, China
conference dates
2010-01-03 - 2010-01-08
external identifiers
  • wos:000282026500128
  • scopus:77951661599
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
02282290-39a6-466e-b73d-bda9cdb1b122 (old id 1695390)
date added to LUP
2016-04-04 12:15:06
date last changed
2020-01-12 21:35:23
@inproceedings{02282290-39a6-466e-b73d-bda9cdb1b122,
  abstract     = {Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.},
  author       = {Suyatin, Dmitry and Trägårdh, Johanna and Messing, Maria and Wagner, Jakob and Montelius, Lars and Pettersson, H. and Samuelson, Lars},
  booktitle    = {INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2},
  language     = {eng},
  pages        = {252--253},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  title        = {Nano-Schottky Contacts Realized by Bottom-up Technique},
  year         = {2010},
}