Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth
(2022) In Physica Status Solidi (A) Applications and Materials Science 219(4).- Abstract
InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si... (More)
InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.
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- author
- Menon, Heera LU ; Morgan, Nicholas Paul ; Hetherington, Crispin LU ; Athle, Robin LU ; Steer, Matthew ; Thayne, Iain ; Fontcuberta i Morral, Anna and Borg, Mattias LU
- organization
- publishing date
- 2022
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- electron backscatter diffraction (EBSD), InSb, rapid melt growth (RMG), Si, single crystal, TEM, XRR
- in
- Physica Status Solidi (A) Applications and Materials Science
- volume
- 219
- issue
- 4
- article number
- 2100467
- publisher
- Wiley-Blackwell
- external identifiers
-
- scopus:85118509472
- ISSN
- 1862-6300
- DOI
- 10.1002/pssa.202100467
- project
- Melting into Applied inteGrated MAterials
- Integration of III-V semiconductor on Si by Rapid Melt Growth
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2021 The Authors. physica status solidi (a) applications and materials science published by Wiley-VCH GmbH
- id
- 0321166a-6a89-46e1-b542-5754fb19aad0
- date added to LUP
- 2021-11-18 09:00:48
- date last changed
- 2023-11-08 23:46:05
@article{0321166a-6a89-46e1-b542-5754fb19aad0, abstract = {{<p>InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.</p>}}, author = {{Menon, Heera and Morgan, Nicholas Paul and Hetherington, Crispin and Athle, Robin and Steer, Matthew and Thayne, Iain and Fontcuberta i Morral, Anna and Borg, Mattias}}, issn = {{1862-6300}}, keywords = {{electron backscatter diffraction (EBSD); InSb; rapid melt growth (RMG); Si; single crystal; TEM; XRR}}, language = {{eng}}, number = {{4}}, publisher = {{Wiley-Blackwell}}, series = {{Physica Status Solidi (A) Applications and Materials Science}}, title = {{Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth}}, url = {{http://dx.doi.org/10.1002/pssa.202100467}}, doi = {{10.1002/pssa.202100467}}, volume = {{219}}, year = {{2022}}, }