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Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Menon, Heera LU ; Morgan, Nicholas Paul ; Hetherington, Crispin LU orcid ; Athle, Robin LU ; Steer, Matthew ; Thayne, Iain ; Fontcuberta i Morral, Anna and Borg, Mattias LU orcid (2022) In Physica Status Solidi (A) Applications and Materials Science 219(4).
Abstract

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si... (More)

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.

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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
electron backscatter diffraction (EBSD), InSb, rapid melt growth (RMG), Si, single crystal, TEM, XRR
in
Physica Status Solidi (A) Applications and Materials Science
volume
219
issue
4
article number
2100467
publisher
Wiley-Blackwell
external identifiers
  • scopus:85118509472
ISSN
1862-6300
DOI
10.1002/pssa.202100467
project
Melting into Applied inteGrated MAterials
Integration of III-V semiconductor on Si by Rapid Melt Growth
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2021 The Authors. physica status solidi (a) applications and materials science published by Wiley-VCH GmbH
id
0321166a-6a89-46e1-b542-5754fb19aad0
date added to LUP
2021-11-18 09:00:48
date last changed
2023-11-08 23:46:05
@article{0321166a-6a89-46e1-b542-5754fb19aad0,
  abstract     = {{<p>InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.</p>}},
  author       = {{Menon, Heera and Morgan, Nicholas Paul and Hetherington, Crispin and Athle, Robin and Steer, Matthew and Thayne, Iain and Fontcuberta i Morral, Anna and Borg, Mattias}},
  issn         = {{1862-6300}},
  keywords     = {{electron backscatter diffraction (EBSD); InSb; rapid melt growth (RMG); Si; single crystal; TEM; XRR}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{Wiley-Blackwell}},
  series       = {{Physica Status Solidi (A) Applications and Materials Science}},
  title        = {{Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth}},
  url          = {{http://dx.doi.org/10.1002/pssa.202100467}},
  doi          = {{10.1002/pssa.202100467}},
  volume       = {{219}},
  year         = {{2022}},
}