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SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

Wernersson, Lars-Erik LU ; Kabeer, S ; Zela, V ; Lind, Erik LU orcid ; Zhang, J ; Seifert, Werner LU ; Kosel, T and Seabaugh, A (2004) In Electronics Letters 40(1). p.83-85
Abstract
A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.
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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Electronics Letters
volume
40
issue
1
pages
83 - 85
publisher
IEE
external identifiers
  • wos:000188172300054
  • scopus:0347130073
ISSN
1350-911X
DOI
10.1049/el:20040048
language
English
LU publication?
yes
id
04267dad-b349-48c1-a611-b4372f2689aa (old id 289785)
date added to LUP
2016-04-01 16:13:04
date last changed
2025-10-14 10:14:41
@article{04267dad-b349-48c1-a611-b4372f2689aa,
  abstract     = {{A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.}},
  author       = {{Wernersson, Lars-Erik and Kabeer, S and Zela, V and Lind, Erik and Zhang, J and Seifert, Werner and Kosel, T and Seabaugh, A}},
  issn         = {{1350-911X}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{83--85}},
  publisher    = {{IEE}},
  series       = {{Electronics Letters}},
  title        = {{SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion}},
  url          = {{http://dx.doi.org/10.1049/el:20040048}},
  doi          = {{10.1049/el:20040048}},
  volume       = {{40}},
  year         = {{2004}},
}