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Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization

Mårsell, Erik LU ; Boström, Emil LU ; Harth, Anne LU ; Losquin, Arthur LU ; Guo, Chen LU ; Cheng, Yu Chen LU ; Lorek, Eleonora LU ; Lehmann, Sebastian LU ; Nylund, Gustav LU and Stankovski, Martin LU , et al. (2018) In Nano Letters 18(2). p.907-915
Abstract

We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Developing ab initio GW calculations of first to third order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While... (More)

We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Developing ab initio GW calculations of first to third order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While the electric-field enhancement due to the semiconductor/vacuum interface has a similar effect for all NW segments, the second and third order multiphoton transitions in the band structure of WZ InAs are highly anisotropic in contrast to ZB InAs. As the crystal phase of NWs can be precisely and reliably tailored, our findings open up for new semiconductor optoelectronics with controllable nanoscale emission of electrons through vacuum or dielectric barriers.

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Contribution to journal
publication status
published
subject
keywords
band structure, III?V, Multiphoton photoemission, nonlinear optics, polytypism, semiconductor nanowires
in
Nano Letters
volume
18
issue
2
pages
9 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85042077049
ISSN
1530-6984
DOI
10.1021/acs.nanolett.7b04267
language
English
LU publication?
yes
id
05add1be-5c15-4525-9df0-9e63d2f2ae29
date added to LUP
2018-03-06 11:12:05
date last changed
2018-05-29 09:36:18
@article{05add1be-5c15-4525-9df0-9e63d2f2ae29,
  abstract     = {<p>We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Developing ab initio GW calculations of first to third order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While the electric-field enhancement due to the semiconductor/vacuum interface has a similar effect for all NW segments, the second and third order multiphoton transitions in the band structure of WZ InAs are highly anisotropic in contrast to ZB InAs. As the crystal phase of NWs can be precisely and reliably tailored, our findings open up for new semiconductor optoelectronics with controllable nanoscale emission of electrons through vacuum or dielectric barriers.</p>},
  author       = {Mårsell, Erik and Boström, Emil and Harth, Anne and Losquin, Arthur and Guo, Chen and Cheng, Yu Chen and Lorek, Eleonora and Lehmann, Sebastian and Nylund, Gustav and Stankovski, Martin and Arnold, Cord L. and Miranda, Miguel and Dick, Kimberly A. and Mauritsson, Johan and Verdozzi, Claudio and L'Huillier, Anne and Mikkelsen, Anders},
  issn         = {1530-6984},
  keyword      = {band structure,III?V,Multiphoton photoemission,nonlinear optics,polytypism,semiconductor nanowires},
  language     = {eng},
  month        = {02},
  number       = {2},
  pages        = {907--915},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.7b04267},
  volume       = {18},
  year         = {2018},
}