Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread
(2015) In Physica Status Solidi (A) Applications and Materials Science 212(12). p.2850-2855- Abstract
We have investigated structural, optical, and electrical properties of MgxZn1-xO:(Al/Ga) thin films in dependence on Mg and Al/Ga concentrations. For this purpose, thin films with two perpendicular, lateral composition gradients, i.e., the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction were grown at 600-C by pulsed-laser deposition (PLD) using a threefold segmented PLD target and 2-inch in diameter c-plane sapphire substrates. It has been found that compensation by intrinsic acceptors limits efficient doping to dopant concentrations of about 2×1021cm-3. Further, the electrical data suggests, that the compensating defect is doubly chargeable hinting to the zinc vacancy as... (More)
We have investigated structural, optical, and electrical properties of MgxZn1-xO:(Al/Ga) thin films in dependence on Mg and Al/Ga concentrations. For this purpose, thin films with two perpendicular, lateral composition gradients, i.e., the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction were grown at 600-C by pulsed-laser deposition (PLD) using a threefold segmented PLD target and 2-inch in diameter c-plane sapphire substrates. It has been found that compensation by intrinsic acceptors limits efficient doping to dopant concentrations of about 2×1021cm-3. Further, the electrical data suggests, that the compensating defect is doubly chargeable hinting to the zinc vacancy as microscopic origin. Increasing the dopant concentration above 2×1021cm-3 leads to a degradation of electrical and structural properties.
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- author
- Mavlonov, Abdurashid ; Richter, Steffen LU ; Von Wenckstern, Holger ; Schmidt-Grund, Rüdiger ; Lenzner, Jörg ; Lorenz, Michael and Grundmann, Marius
- publishing date
- 2015-12-01
- type
- Contribution to journal
- publication status
- published
- keywords
- (Mg, doping, Pulsed laser deposition, thin films, transparent conductive oxides, Zn)O
- in
- Physica Status Solidi (A) Applications and Materials Science
- volume
- 212
- issue
- 12
- pages
- 6 pages
- publisher
- Wiley-Blackwell
- external identifiers
-
- scopus:84949724641
- ISSN
- 1862-6300
- DOI
- 10.1002/pssa.201431932
- language
- English
- LU publication?
- no
- additional info
- Publisher Copyright: © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
- id
- 05fd467d-2e5b-480e-b03c-0069e1f3c980
- date added to LUP
- 2022-04-19 14:52:29
- date last changed
- 2022-04-25 16:22:24
@article{05fd467d-2e5b-480e-b03c-0069e1f3c980, abstract = {{<p>We have investigated structural, optical, and electrical properties of MgxZn1-xO:(Al/Ga) thin films in dependence on Mg and Al/Ga concentrations. For this purpose, thin films with two perpendicular, lateral composition gradients, i.e., the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction were grown at 600-C by pulsed-laser deposition (PLD) using a threefold segmented PLD target and 2-inch in diameter c-plane sapphire substrates. It has been found that compensation by intrinsic acceptors limits efficient doping to dopant concentrations of about 2×1021cm-3. Further, the electrical data suggests, that the compensating defect is doubly chargeable hinting to the zinc vacancy as microscopic origin. Increasing the dopant concentration above 2×1021cm-3 leads to a degradation of electrical and structural properties.</p>}}, author = {{Mavlonov, Abdurashid and Richter, Steffen and Von Wenckstern, Holger and Schmidt-Grund, Rüdiger and Lenzner, Jörg and Lorenz, Michael and Grundmann, Marius}}, issn = {{1862-6300}}, keywords = {{(Mg; doping; Pulsed laser deposition; thin films; transparent conductive oxides; Zn)O}}, language = {{eng}}, month = {{12}}, number = {{12}}, pages = {{2850--2855}}, publisher = {{Wiley-Blackwell}}, series = {{Physica Status Solidi (A) Applications and Materials Science}}, title = {{Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread}}, url = {{http://dx.doi.org/10.1002/pssa.201431932}}, doi = {{10.1002/pssa.201431932}}, volume = {{212}}, year = {{2015}}, }