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Realization of Wurtzite GaSb Using InAs Nanowire Templates

Namazi, Luna LU ; Gren, Louise LU ; Nilsson, Malin LU ; Garbrecht, Magnus; Thelander, Claes LU ; Zamani, Reza R. LU and Dick, Kimberly A. LU (2018) In Advanced Functional Materials 28(28).
Abstract

The crystal structure of a material has a large impact on the electronic and material properties such as band alignment, bandgap energy, and surface energies. Au-seeded III–V nanowires are promising structures for exploring these effects, since for most III–V materials they readily grow in either wurtzite or zinc blende crystal structure. In III–Sb nanowires however, wurtzite crystal structure growth has proven difficult. Therefore, other methods must be developed to achieve wurtzite antimonides. For GaSb, theoretical predictions of the band structure diverge significantly, but the absence of wurtzite GaSb material has prevented any experimental verification of the properties. Having access to this material is a critical step toward... (More)

The crystal structure of a material has a large impact on the electronic and material properties such as band alignment, bandgap energy, and surface energies. Au-seeded III–V nanowires are promising structures for exploring these effects, since for most III–V materials they readily grow in either wurtzite or zinc blende crystal structure. In III–Sb nanowires however, wurtzite crystal structure growth has proven difficult. Therefore, other methods must be developed to achieve wurtzite antimonides. For GaSb, theoretical predictions of the band structure diverge significantly, but the absence of wurtzite GaSb material has prevented any experimental verification of the properties. Having access to this material is a critical step toward clearing the uncertainty in the electronic properties, improving the theoretical band structure models and potentially opening doors toward application of this material. This work demonstrates the use of InAs wurtzite nanowires as templates for realizing GaSb wurtzite shell layers with varying thicknesses. The properties of the axial and radial heterointerfaces are studied at the atomic scale by means of aberration-corrected scanning transmission electron microscopy, revealing their sharpness and structural quality. The transport characterizations point toward a positive offset in the valence bandedge of wurtzite compared to zinc blende.

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
aberration-corrected STEM, GaSb–InAs, heterointerface, III–V nanowires, wurtzite GaSb
in
Advanced Functional Materials
volume
28
issue
28
publisher
Wiley-VCH Verlag
external identifiers
  • scopus:85047545300
ISSN
1616-301X
DOI
10.1002/adfm.201800512
language
English
LU publication?
yes
id
093f74b2-c5f2-423c-b95a-d98766bd791d
date added to LUP
2019-03-25 11:06:54
date last changed
2019-10-15 07:00:52
@article{093f74b2-c5f2-423c-b95a-d98766bd791d,
  abstract     = {<p>The crystal structure of a material has a large impact on the electronic and material properties such as band alignment, bandgap energy, and surface energies. Au-seeded III–V nanowires are promising structures for exploring these effects, since for most III–V materials they readily grow in either wurtzite or zinc blende crystal structure. In III–Sb nanowires however, wurtzite crystal structure growth has proven difficult. Therefore, other methods must be developed to achieve wurtzite antimonides. For GaSb, theoretical predictions of the band structure diverge significantly, but the absence of wurtzite GaSb material has prevented any experimental verification of the properties. Having access to this material is a critical step toward clearing the uncertainty in the electronic properties, improving the theoretical band structure models and potentially opening doors toward application of this material. This work demonstrates the use of InAs wurtzite nanowires as templates for realizing GaSb wurtzite shell layers with varying thicknesses. The properties of the axial and radial heterointerfaces are studied at the atomic scale by means of aberration-corrected scanning transmission electron microscopy, revealing their sharpness and structural quality. The transport characterizations point toward a positive offset in the valence bandedge of wurtzite compared to zinc blende.</p>},
  articleno    = {1800512},
  author       = {Namazi, Luna and Gren, Louise and Nilsson, Malin and Garbrecht, Magnus and Thelander, Claes and Zamani, Reza R. and Dick, Kimberly A.},
  issn         = {1616-301X},
  keyword      = {aberration-corrected STEM,GaSb–InAs,heterointerface,III–V nanowires,wurtzite GaSb},
  language     = {eng},
  month        = {07},
  number       = {28},
  publisher    = {Wiley-VCH Verlag},
  series       = {Advanced Functional Materials},
  title        = {Realization of Wurtzite GaSb Using InAs Nanowire Templates},
  url          = {http://dx.doi.org/10.1002/adfm.201800512},
  volume       = {28},
  year         = {2018},
}