Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence
(2013) 31st International Conference on the Physics of Semiconductors (ICPS) 1566. p.427-428- Abstract
- We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4419053
- author
- Nylund, Gustav LU ; Storm, Kristian LU ; Torstensson, Henrik ; Wallentin, Jesper LU ; Borgström, Magnus LU ; Hessman, Dan LU and Samuelson, Lars LU
- organization
- publishing date
- 2013
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- nanowire, wrap-gate, photoluminescence, InP, ITO
- host publication
- Physics of Semiconductors
- volume
- 1566
- pages
- 427 - 428
- publisher
- American Institute of Physics (AIP)
- conference name
- 31st International Conference on the Physics of Semiconductors (ICPS)
- conference dates
- 2012-07-29 - 2012-08-03
- external identifiers
-
- wos:000331793000213
- scopus:84907320871
- ISSN
- 1551-7616
- 0094-243X
- DOI
- 10.1063/1.4848468
- language
- English
- LU publication?
- yes
- id
- 0a960eb8-ac96-4bbc-810b-936697dd6013 (old id 4419053)
- date added to LUP
- 2016-04-01 09:58:54
- date last changed
- 2024-08-11 10:30:15
@inproceedings{0a960eb8-ac96-4bbc-810b-936697dd6013, abstract = {{We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.}}, author = {{Nylund, Gustav and Storm, Kristian and Torstensson, Henrik and Wallentin, Jesper and Borgström, Magnus and Hessman, Dan and Samuelson, Lars}}, booktitle = {{Physics of Semiconductors}}, issn = {{1551-7616}}, keywords = {{nanowire; wrap-gate; photoluminescence; InP; ITO}}, language = {{eng}}, pages = {{427--428}}, publisher = {{American Institute of Physics (AIP)}}, title = {{Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence}}, url = {{http://dx.doi.org/10.1063/1.4848468}}, doi = {{10.1063/1.4848468}}, volume = {{1566}}, year = {{2013}}, }