Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence

Nylund, Gustav LU ; Storm, Kristian LU ; Torstensson, Henrik ; Wallentin, Jesper LU ; Borgström, Magnus LU ; Hessman, Dan LU and Samuelson, Lars LU (2013) 31st International Conference on the Physics of Semiconductors (ICPS) 1566. p.427-428
Abstract
We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
nanowire, wrap-gate, photoluminescence, InP, ITO
host publication
Physics of Semiconductors
volume
1566
pages
427 - 428
publisher
American Institute of Physics (AIP)
conference name
31st International Conference on the Physics of Semiconductors (ICPS)
conference dates
2012-07-29 - 2012-08-03
external identifiers
  • wos:000331793000213
  • scopus:84907320871
ISSN
1551-7616
0094-243X
DOI
10.1063/1.4848468
language
English
LU publication?
yes
id
0a960eb8-ac96-4bbc-810b-936697dd6013 (old id 4419053)
date added to LUP
2016-04-01 09:58:54
date last changed
2024-01-06 04:48:54
@inproceedings{0a960eb8-ac96-4bbc-810b-936697dd6013,
  abstract     = {{We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.}},
  author       = {{Nylund, Gustav and Storm, Kristian and Torstensson, Henrik and Wallentin, Jesper and Borgström, Magnus and Hessman, Dan and Samuelson, Lars}},
  booktitle    = {{Physics of Semiconductors}},
  issn         = {{1551-7616}},
  keywords     = {{nanowire; wrap-gate; photoluminescence; InP; ITO}},
  language     = {{eng}},
  pages        = {{427--428}},
  publisher    = {{American Institute of Physics (AIP)}},
  title        = {{Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence}},
  url          = {{http://dx.doi.org/10.1063/1.4848468}},
  doi          = {{10.1063/1.4848468}},
  volume       = {{1566}},
  year         = {{2013}},
}