1/f Noise Characterization in CMOS Transistors in 0.13um Technology
(2006) p.81-84- Abstract
- Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13mum technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter alphaH and the Coulomb scattering parameter alphas have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1051059
- author
- Citakovic, Jelena ; Stenberg, Lars and Andreani, Pietro LU
- publishing date
- 2006
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 24th Norchip Conference, 2006.
- pages
- 81 - 84
- external identifiers
-
- scopus:34547318998
- ISBN
- 1-4244-0772-9
- DOI
- 10.1109/NORCHP.2006.329249
- language
- English
- LU publication?
- no
- id
- 7248cf22-e6d7-4ef4-be3e-c53521b4b1bb (old id 1051059)
- alternative location
- http://ieeexplore.ieee.org/iel5/4126933/4075696/04126952.pdf?tp=&isnumber=4075696&arnumber=4126952&punumber=4126933
- date added to LUP
- 2016-04-04 13:29:01
- date last changed
- 2022-01-30 00:19:07
@inproceedings{7248cf22-e6d7-4ef4-be3e-c53521b4b1bb,
abstract = {{Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13mum technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter alphaH and the Coulomb scattering parameter alphas have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model}},
author = {{Citakovic, Jelena and Stenberg, Lars and Andreani, Pietro}},
booktitle = {{24th Norchip Conference, 2006.}},
isbn = {{1-4244-0772-9}},
language = {{eng}},
pages = {{81--84}},
title = {{1/f Noise Characterization in CMOS Transistors in 0.13um Technology}},
url = {{http://dx.doi.org/10.1109/NORCHP.2006.329249}},
doi = {{10.1109/NORCHP.2006.329249}},
year = {{2006}},
}