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A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor

Andreani, Pietro LU and Mattisson, Sven LU (2000) 1. p.315-318
Abstract
This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor
Please use this url to cite or link to this publication:
author
and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
The 2000 IEEE International Symposium on Circuits and Systems, 2000. Proceedings. ISCAS 2000.
volume
1
pages
315 - 318
external identifiers
  • scopus:0033697592
ISBN
0-7803-5482-6
DOI
10.1109/ISCAS.2000.857093
language
English
LU publication?
yes
id
ec1d162e-59cd-4c60-8192-3b64baa7332c (old id 1051490)
alternative location
http://ieeexplore.ieee.org/iel5/6910/18601/00857093.pdf?tp=&isnumber=18601&arnumber=857093&punumber=6910
date added to LUP
2016-04-04 13:47:59
date last changed
2022-01-30 00:56:33
@inproceedings{ec1d162e-59cd-4c60-8192-3b64baa7332c,
  abstract     = {{This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor}},
  author       = {{Andreani, Pietro and Mattisson, Sven}},
  booktitle    = {{The 2000 IEEE International Symposium on Circuits and Systems, 2000. Proceedings. ISCAS 2000.}},
  isbn         = {{0-7803-5482-6}},
  language     = {{eng}},
  pages        = {{315--318}},
  title        = {{A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor}},
  url          = {{http://dx.doi.org/10.1109/ISCAS.2000.857093}},
  doi          = {{10.1109/ISCAS.2000.857093}},
  volume       = {{1}},
  year         = {{2000}},
}