Serendipitous noise reduction in inductively degenerated CMOS RF LNAs
(2003) p.24-26- Abstract
- The design of radio-frequency inductively-degenerated
CMOS low-noise-amplifiers does not follow the
guidelines for minimum noise figure. Nonetheless,
state-of-the-art implementations achieve noise figure
values very close to the theoretical minimum. In this
brief contribution, we point out that this is due to the
effect of the parasitic overlap capacitances in the MOS
device acting as transconductor. In particular, we
show that overlap capacitances lead to a significant
induced-gate-noise reduction, especially when deep
sub-micron CMOS processes are used.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1054647
- author
- Rossi, Paolo ; Svelto, Francesco and Andreani, Pietro LU
- publishing date
- 2003
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Proceedings of the 2003 NORCHIP Conference
- pages
- 24 - 26
- language
- English
- LU publication?
- no
- id
- 172be155-a64f-4117-ac56-0e381aaaff01 (old id 1054647)
- date added to LUP
- 2016-04-04 14:15:04
- date last changed
- 2018-11-21 21:19:12
@inproceedings{172be155-a64f-4117-ac56-0e381aaaff01, abstract = {{The design of radio-frequency inductively-degenerated<br/><br> CMOS low-noise-amplifiers does not follow the<br/><br> guidelines for minimum noise figure. Nonetheless,<br/><br> state-of-the-art implementations achieve noise figure<br/><br> values very close to the theoretical minimum. In this<br/><br> brief contribution, we point out that this is due to the<br/><br> effect of the parasitic overlap capacitances in the MOS<br/><br> device acting as transconductor. In particular, we<br/><br> show that overlap capacitances lead to a significant<br/><br> induced-gate-noise reduction, especially when deep<br/><br> sub-micron CMOS processes are used.}}, author = {{Rossi, Paolo and Svelto, Francesco and Andreani, Pietro}}, booktitle = {{Proceedings of the 2003 NORCHIP Conference}}, language = {{eng}}, pages = {{24--26}}, title = {{Serendipitous noise reduction in inductively degenerated CMOS RF LNAs}}, year = {{2003}}, }