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Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

Svensson, C Patrik T; Mårtensson, Thomas LU ; Trägårdh, Johanna LU ; Larsson, Christina; Rask, Michael; Hessman, Dan LU ; Samuelson, Lars LU and Ohlsson, Jonas LU (2008) In Nanotechnology 19(30). p.6-305201
Abstract
Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
19
issue
30
pages
6 - 305201
publisher
IOP Publishing
external identifiers
  • wos:000256838400003
  • scopus:47249112911
ISSN
0957-4484
DOI
10.1088/0957-4484/19/30/305201
language
English
LU publication?
yes
id
fdb7a356-1ce9-483f-a108-9152843a76db (old id 1190575)
date added to LUP
2008-09-08 10:29:36
date last changed
2017-10-22 03:46:28
@article{fdb7a356-1ce9-483f-a108-9152843a76db,
  abstract     = {Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.},
  author       = {Svensson, C Patrik T and Mårtensson, Thomas and Trägårdh, Johanna and Larsson, Christina and Rask, Michael and Hessman, Dan and Samuelson, Lars and Ohlsson, Jonas},
  issn         = {0957-4484},
  language     = {eng},
  number       = {30},
  pages        = {6--305201},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Monolithic GaAs/InGaP nanowire light emitting diodes on silicon},
  url          = {http://dx.doi.org/10.1088/0957-4484/19/30/305201},
  volume       = {19},
  year         = {2008},
}