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A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP

Sun, Jie LU ; Wallin, Daniel LU ; Maximov, Ivan LU and Xu, Hongqi LU (2008) In IEEE Electron Device Letters 29(6). p.540-542
Abstract
In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
three-terminal ballistic, nanoelectronics, set-reset (SR) latch, junction (TBJ)
in
IEEE Electron Device Letters
volume
29
issue
6
pages
540 - 542
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000256189000002
  • scopus:44849137062
ISSN
0741-3106
DOI
10.1109/LED.2008.922983
language
English
LU publication?
yes
id
b5ccfe70-05b5-4e77-baae-22a5467ba5be (old id 1202036)
date added to LUP
2008-09-15 14:01:48
date last changed
2017-01-01 06:08:08
@article{b5ccfe70-05b5-4e77-baae-22a5467ba5be,
  abstract     = {In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.},
  author       = {Sun, Jie and Wallin, Daniel and Maximov, Ivan and Xu, Hongqi},
  issn         = {0741-3106},
  keyword      = {three-terminal ballistic,nanoelectronics,set-reset (SR) latch,junction (TBJ)},
  language     = {eng},
  number       = {6},
  pages        = {540--542},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP},
  url          = {http://dx.doi.org/10.1109/LED.2008.922983},
  volume       = {29},
  year         = {2008},
}