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Confinement properties of a Ga0.25In0.75As/InP quantum point contact

Martin, T P ; Marlow, C A ; Samuelson, Lars LU ; Hamilton, A R ; Linke, H and Taylor, R P (2008) In Physical Review B (Condensed Matter and Materials Physics) 77(15). p.5-155309
Abstract
We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
77
issue
15
pages
5 - 155309
publisher
American Physical Society
external identifiers
  • wos:000255457400079
  • scopus:42049120966
ISSN
1098-0121
DOI
10.1103/PhysRevB.77.155309
language
English
LU publication?
yes
id
5f1613b8-2d8e-404c-8362-b101b31be713 (old id 1204561)
date added to LUP
2016-04-01 13:19:54
date last changed
2022-01-27 18:35:29
@article{5f1613b8-2d8e-404c-8362-b101b31be713,
  abstract     = {{We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.}},
  author       = {{Martin, T P and Marlow, C A and Samuelson, Lars and Hamilton, A R and Linke, H and Taylor, R P}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  number       = {{15}},
  pages        = {{5--155309}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Confinement properties of a Ga0.25In0.75As/InP quantum point contact}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.77.155309}},
  doi          = {{10.1103/PhysRevB.77.155309}},
  volume       = {{77}},
  year         = {{2008}},
}