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Confinement properties of a Ga0.25In0.75As/InP quantum point contact

Martin, T P; Marlow, C A; Samuelson, Lars LU ; Hamilton, A R; Linke, H and Taylor, R P (2008) In Physical Review B (Condensed Matter and Materials Physics) 77(15). p.5-155309
Abstract
We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
77
issue
15
pages
5 - 155309
publisher
American Physical Society
external identifiers
  • wos:000255457400079
  • scopus:42049120966
ISSN
1098-0121
DOI
10.1103/PhysRevB.77.155309
language
English
LU publication?
yes
id
5f1613b8-2d8e-404c-8362-b101b31be713 (old id 1204561)
date added to LUP
2008-09-17 14:25:18
date last changed
2017-04-23 03:50:00
@article{5f1613b8-2d8e-404c-8362-b101b31be713,
  abstract     = {We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.},
  author       = {Martin, T P and Marlow, C A and Samuelson, Lars and Hamilton, A R and Linke, H and Taylor, R P},
  issn         = {1098-0121},
  language     = {eng},
  number       = {15},
  pages        = {5--155309},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Confinement properties of a Ga0.25In0.75As/InP quantum point contact},
  url          = {http://dx.doi.org/10.1103/PhysRevB.77.155309},
  volume       = {77},
  year         = {2008},
}