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Carrier density saturation in a Ga0.25In0.75As/InP heterostructure

Martin, T. P. ; Marlow, C. A. ; Samuelson, Lars LU ; Linke, H. and Taylor, R. P. (2008) In Physica E: Low-Dimensional Systems and Nanostructures 40(5). p.1754-1756
Abstract
We observe a strong saturation of the carrier density in the quantum well of a Ga0.25In0.75As/InP MISFET at positive gate voltages. Using a self-consistent Schrodinger/Poisson solver, we model the band structure and find that the saturation is caused by the population of charge states between the gate and the quantum well. We discuss the impact of these charge states on the transport properties, and present a fabrication method that avoids parallel conduction in this heterostructure. (C) 2007 Elsevier B.V. All rights reserved.
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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
saturation, carrier density, GaInAs, InP, band structure
in
Physica E: Low-Dimensional Systems and Nanostructures
volume
40
issue
5
pages
1754 - 1756
publisher
Elsevier
external identifiers
  • wos:000254646400258
  • scopus:39649094270
ISSN
1386-9477
DOI
10.1016/j.physe.2007.11.001
language
English
LU publication?
yes
id
eace30b8-9fd2-4a62-ada1-6276bacbf1cf (old id 1207414)
date added to LUP
2016-04-01 13:07:06
date last changed
2022-01-27 17:28:36
@article{eace30b8-9fd2-4a62-ada1-6276bacbf1cf,
  abstract     = {{We observe a strong saturation of the carrier density in the quantum well of a Ga0.25In0.75As/InP MISFET at positive gate voltages. Using a self-consistent Schrodinger/Poisson solver, we model the band structure and find that the saturation is caused by the population of charge states between the gate and the quantum well. We discuss the impact of these charge states on the transport properties, and present a fabrication method that avoids parallel conduction in this heterostructure. (C) 2007 Elsevier B.V. All rights reserved.}},
  author       = {{Martin, T. P. and Marlow, C. A. and Samuelson, Lars and Linke, H. and Taylor, R. P.}},
  issn         = {{1386-9477}},
  keywords     = {{saturation; carrier density; GaInAs; InP; band structure}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{1754--1756}},
  publisher    = {{Elsevier}},
  series       = {{Physica E: Low-Dimensional Systems and Nanostructures}},
  title        = {{Carrier density saturation in a Ga0.25In0.75As/InP heterostructure}},
  url          = {{http://dx.doi.org/10.1016/j.physe.2007.11.001}},
  doi          = {{10.1016/j.physe.2007.11.001}},
  volume       = {{40}},
  year         = {{2008}},
}