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An inductorless 300MHz wideband CMOS power amplifier

Sjöland, Henrik LU (1999) In Analog Integrated Circuits and Signal Processing 21(1). p.57-65
Abstract
The power amplifier tends to be one of the most demanding parts to fully integrate when building an entire radio on a CMOS chip. In this paper the design of a fully integrated RF power amplifier without inductors is described. As inductors in CMOS technology are associated with various problems, it is interesting to examine what performance can be achieved without them. An amplifier with an operating band from 60 MHz to 300 MHz (–3 dB) is built in 0.8 m CMOS. A 3 V supply is used. The measured midband power gain is 30 dB with 50 resistive source and load impedance. As linearity is important for many modern modulation schemes, the amplifier is designed to be as linear as possible. The measured third order intercept point is 23 dBm and the 1... (More)
The power amplifier tends to be one of the most demanding parts to fully integrate when building an entire radio on a CMOS chip. In this paper the design of a fully integrated RF power amplifier without inductors is described. As inductors in CMOS technology are associated with various problems, it is interesting to examine what performance can be achieved without them. An amplifier with an operating band from 60 MHz to 300 MHz (–3 dB) is built in 0.8 m CMOS. A 3 V supply is used. The measured midband power gain is 30 dB with 50 resistive source and load impedance. As linearity is important for many modern modulation schemes, the amplifier is designed to be as linear as possible. The measured third order intercept point is 23 dBm and the 1 dB compression point is 10 dBm, both referred to the output. The output is single ended to avoid an off-chip differential to single ended transformer. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Analog Integrated Circuits and Signal Processing
volume
21
issue
1
pages
57 - 65
publisher
Springer
external identifiers
  • scopus:0343826641
ISSN
0925-1030
DOI
10.1023/A:1008327810923
language
English
LU publication?
yes
id
1b304fd4-815b-4bff-b111-ae7e541fd966 (old id 1244449)
date added to LUP
2008-10-07 10:18:52
date last changed
2017-01-01 07:09:26
@article{1b304fd4-815b-4bff-b111-ae7e541fd966,
  abstract     = {The power amplifier tends to be one of the most demanding parts to fully integrate when building an entire radio on a CMOS chip. In this paper the design of a fully integrated RF power amplifier without inductors is described. As inductors in CMOS technology are associated with various problems, it is interesting to examine what performance can be achieved without them. An amplifier with an operating band from 60 MHz to 300 MHz (–3 dB) is built in 0.8 m CMOS. A 3 V supply is used. The measured midband power gain is 30 dB with 50 resistive source and load impedance. As linearity is important for many modern modulation schemes, the amplifier is designed to be as linear as possible. The measured third order intercept point is 23 dBm and the 1 dB compression point is 10 dBm, both referred to the output. The output is single ended to avoid an off-chip differential to single ended transformer.},
  author       = {Sjöland, Henrik},
  issn         = {0925-1030},
  language     = {eng},
  number       = {1},
  pages        = {57--65},
  publisher    = {Springer},
  series       = {Analog Integrated Circuits and Signal Processing},
  title        = {An inductorless 300MHz wideband CMOS power amplifier},
  url          = {http://dx.doi.org/10.1023/A:1008327810923},
  volume       = {21},
  year         = {1999},
}