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A 100MHz CMOS wideband IF amplifier

Sjöland, Henrik LU and Mattisson, Sven LU (1998) In IEEE Journal of Solid-State Circuits 33(4). p.631-634
Abstract
When the data rates of communication systems increase, wideband IF amplifiers are needed. It is also possible to use a single wideband intermediate frequency (IF) amplifier for a radio band with several narrow-band channels of varying strengths. The linearity is then critical, if intermodulation products are not to disturb weak channels. We try to find a topology for this new amplifier application, suitable for integration in a standard CMOS process. To get low distortion, we use an output stage with high linearity, which is further linearized by feedback in a double-nested Miller configuration. A 0.8-μm standard CMOS IF amplifier design with low distortion up to 20 MHz is presented.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Journal of Solid-State Circuits
volume
33
issue
4
pages
631 - 634
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:0342343417
ISSN
0018-9200
DOI
10.1109/4.663569
language
English
LU publication?
yes
id
8fb0ab52-2cbb-46f9-b9f8-9744e8adf044 (old id 1244456)
date added to LUP
2008-10-07 09:59:28
date last changed
2017-01-01 07:26:26
@article{8fb0ab52-2cbb-46f9-b9f8-9744e8adf044,
  abstract     = {When the data rates of communication systems increase, wideband IF amplifiers are needed. It is also possible to use a single wideband intermediate frequency (IF) amplifier for a radio band with several narrow-band channels of varying strengths. The linearity is then critical, if intermodulation products are not to disturb weak channels. We try to find a topology for this new amplifier application, suitable for integration in a standard CMOS process. To get low distortion, we use an output stage with high linearity, which is further linearized by feedback in a double-nested Miller configuration. A 0.8-μm standard CMOS IF amplifier design with low distortion up to 20 MHz is presented.},
  author       = {Sjöland, Henrik and Mattisson, Sven},
  issn         = {0018-9200},
  language     = {eng},
  number       = {4},
  pages        = {631--634},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Journal of Solid-State Circuits},
  title        = {A 100MHz CMOS wideband IF amplifier},
  url          = {http://dx.doi.org/10.1109/4.663569},
  volume       = {33},
  year         = {1998},
}