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A GaN HEMT power amplifier with variable gate bias for envelope and phase signals

Cijvat, Pieternella LU ; Tom, Kevin ; Faulkner, Michael and Sjöland, Henrik LU (2007) Norchip conference, 2007 p.108-111
Abstract
This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination. The low-frequency envelope signal is used to vary the gate (bias) voltage of the device, resulting in a pulse width modulated drain voltage, while modulation of supply voltage or current is avoided. The test circuit is implemented using a discrete GaN HEMT power amplifier and discrete surface-mount passive components assembled on a PCB. Measurements showed a maximum drain efficiency of 59% at 360 MHz, at an output power of 29 dBm. The output power as a function of the gate bias voltage varied between 3 and 29 dBm, with the drain efficiency varying between 6 and 59%.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
[Host publication title missing]
pages
108 - 111
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
Norchip conference, 2007
conference location
Aalborg, Denmark
conference dates
2007-11-19 - 2007-11-20
external identifiers
  • wos:000257311000025
  • scopus:50249184500
ISBN
978-1-4244-1516-8
DOI
10.1109/NORCHP.2007.4481050
language
English
LU publication?
yes
id
278c5e15-0860-4e75-ad77-e14d6e4a9a94 (old id 1244478)
date added to LUP
2016-04-04 11:57:26
date last changed
2020-03-11 06:10:17
@inproceedings{278c5e15-0860-4e75-ad77-e14d6e4a9a94,
  abstract     = {This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination. The low-frequency envelope signal is used to vary the gate (bias) voltage of the device, resulting in a pulse width modulated drain voltage, while modulation of supply voltage or current is avoided. The test circuit is implemented using a discrete GaN HEMT power amplifier and discrete surface-mount passive components assembled on a PCB. Measurements showed a maximum drain efficiency of 59% at 360 MHz, at an output power of 29 dBm. The output power as a function of the gate bias voltage varied between 3 and 29 dBm, with the drain efficiency varying between 6 and 59%.},
  author       = {Cijvat, Pieternella and Tom, Kevin and Faulkner, Michael and Sjöland, Henrik},
  booktitle    = {[Host publication title missing]},
  isbn         = {978-1-4244-1516-8},
  language     = {eng},
  pages        = {108--111},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  title        = {A GaN HEMT power amplifier with variable gate bias for envelope and phase signals},
  url          = {https://lup.lub.lu.se/search/ws/files/5894246/1244791.pdf},
  doi          = {10.1109/NORCHP.2007.4481050},
  year         = {2007},
}