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Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

Martin, T. P.; Szorkovszky, A.; Micolich, A. P.; Hamilton, A. R.; Marlow, C. A.; Linke, H.; Taylor, R. P. and Samuelson, Lars LU (2008) In Applied Physics Letters 93(1).
Abstract
The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from vertical bar g*vertical bar=3.8 +/- 0.2 for the third subband to vertical bar g*vertical bar=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures. (C) 2008 American Institute of Physics.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
93
issue
1
publisher
American Institute of Physics
external identifiers
  • wos:000258184600031
  • scopus:47249143244
ISSN
0003-6951
DOI
10.1063/1.2957033
language
English
LU publication?
yes
id
eae0d693-dbf1-439d-8538-5fc299c0a4ac (old id 1253532)
date added to LUP
2008-11-14 14:55:15
date last changed
2017-10-22 03:39:06
@article{eae0d693-dbf1-439d-8538-5fc299c0a4ac,
  abstract     = {The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from vertical bar g*vertical bar=3.8 +/- 0.2 for the third subband to vertical bar g*vertical bar=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures. (C) 2008 American Institute of Physics.},
  articleno    = {012105},
  author       = {Martin, T. P. and Szorkovszky, A. and Micolich, A. P. and Hamilton, A. R. and Marlow, C. A. and Linke, H. and Taylor, R. P. and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {1},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts},
  url          = {http://dx.doi.org/10.1063/1.2957033},
  volume       = {93},
  year         = {2008},
}