Advanced

XANES studies of Mn K and L-3,L-2 edges in the (Ga,Mn) As layers modified by high temperature annealing

Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M. T.; Jakiela, R.; Sadowski, Janusz LU ; Demchenko, I. N.; Holub-Krappe, E.; Persson, A. and Arvanitis, D. (2008) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 114(2). p.357-366
Abstract
Ga1-xMnx As is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Gal-,Mn.As samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using... (More)
Ga1-xMnx As is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Gal-,Mn.As samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ca and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
volume
114
issue
2
pages
357 - 366
publisher
Institute of Physics, Polish Academy of Sciences
external identifiers
  • wos:000258163200007
  • scopus:49149130527
ISSN
0587-4246
language
English
LU publication?
yes
id
44209fdc-8d96-4ee7-9b2f-57a0905cc39f (old id 1253542)
alternative location
http://przyrbwn.icm.edu.pl/APP/ABSTR/114/a114-2-6.html
date added to LUP
2008-10-28 16:23:24
date last changed
2017-01-01 06:09:43
@article{44209fdc-8d96-4ee7-9b2f-57a0905cc39f,
  abstract     = {Ga1-xMnx As is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Gal-,Mn.As samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ca and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms.},
  author       = {Wolska, A. and Lawniczak-Jablonska, K. and Klepka, M. T. and Jakiela, R. and Sadowski, Janusz and Demchenko, I. N. and Holub-Krappe, E. and Persson, A. and Arvanitis, D.},
  issn         = {0587-4246},
  language     = {eng},
  number       = {2},
  pages        = {357--366},
  publisher    = {Institute of Physics, Polish Academy of Sciences},
  series       = {Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics},
  title        = {XANES studies of Mn K and L-3,L-2 edges in the (Ga,Mn) As layers modified by high temperature annealing},
  volume       = {114},
  year         = {2008},
}