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Metalorganic Chemical Vapor Deposition of Anatase Titanium Dioxide on Si: Modifying the Interface by Pre-Oxidation.

Sandell, A; Andersson, M P; Johansson, Mikael LU ; Karlsson, P G; Alfredsson, Y; Schnadt, Joachim LU ; Siegbahn, H and Uvdal, Per LU (2003) In Surface Science 530(1-2). p.63-70
Abstract
The formation of TiO2 films on clean and pre-oxidized Si(1 1 1) through chemical vapor deposition of titanium(IV) isopropoxide (TTIP) in ultra-high vacuum has been examined by synchrotron radiation photoelectron spectroscopy, X-ray absorption spectroscopy (XAS) and scanning tunneling microscopy. In both cases, TTIP deposition at 500 °C eventually results in an anatase TiO2 film with a carbon-free surface and the surface morphology of the anatase films is very similar. By using a novel way of combining photoemission and XAS data, it is demonstrated that the two situations have substantially different interfacial properties. Pre-oxidation of the surface at 500 °C passivates the surface so that the thickness of the amorphous TiSixOy interface... (More)
The formation of TiO2 films on clean and pre-oxidized Si(1 1 1) through chemical vapor deposition of titanium(IV) isopropoxide (TTIP) in ultra-high vacuum has been examined by synchrotron radiation photoelectron spectroscopy, X-ray absorption spectroscopy (XAS) and scanning tunneling microscopy. In both cases, TTIP deposition at 500 °C eventually results in an anatase TiO2 film with a carbon-free surface and the surface morphology of the anatase films is very similar. By using a novel way of combining photoemission and XAS data, it is demonstrated that the two situations have substantially different interfacial properties. Pre-oxidation of the surface at 500 °C passivates the surface so that the thickness of the amorphous TiSixOy interface layer decreases from 30–35 to 15–25 Å and eliminates the formation of interfacial carbon completely. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
X-ray absorption spectroscopy, Chemical vapor deposition, Synchrotron radiation photoelectron spectroscopy, Growth, Low index single crystal surfaces, Scanning tunneling microscopy, Semiconductor–insulator interfaces, Metal–oxide–semiconductor (MOS) structures, Interface states, and topography, Titanium oxide, roughness, morphology, Surface structure
in
Surface Science
volume
530
issue
1-2
pages
63 - 70
publisher
Elsevier
external identifiers
  • wos:000182469700011
  • scopus:0037457552
ISSN
0039-6028
DOI
10.1016/S0039-6028(03)00386-8
language
English
LU publication?
yes
id
b98c405d-8fd9-431f-b6b5-9812722bb713 (old id 128214)
date added to LUP
2007-07-03 16:37:59
date last changed
2018-10-03 11:54:43
@article{b98c405d-8fd9-431f-b6b5-9812722bb713,
  abstract     = {The formation of TiO2 films on clean and pre-oxidized Si(1 1 1) through chemical vapor deposition of titanium(IV) isopropoxide (TTIP) in ultra-high vacuum has been examined by synchrotron radiation photoelectron spectroscopy, X-ray absorption spectroscopy (XAS) and scanning tunneling microscopy. In both cases, TTIP deposition at 500 °C eventually results in an anatase TiO2 film with a carbon-free surface and the surface morphology of the anatase films is very similar. By using a novel way of combining photoemission and XAS data, it is demonstrated that the two situations have substantially different interfacial properties. Pre-oxidation of the surface at 500 °C passivates the surface so that the thickness of the amorphous TiSixOy interface layer decreases from 30–35 to 15–25 Å and eliminates the formation of interfacial carbon completely.},
  author       = {Sandell, A and Andersson, M P and Johansson, Mikael and Karlsson, P G and Alfredsson, Y and Schnadt, Joachim and Siegbahn, H and Uvdal, Per},
  issn         = {0039-6028},
  keyword      = {X-ray absorption spectroscopy,Chemical vapor deposition,Synchrotron radiation photoelectron spectroscopy,Growth,Low index single crystal surfaces,Scanning tunneling microscopy,Semiconductor–insulator interfaces,Metal–oxide–semiconductor (MOS) structures,Interface states,and topography,Titanium oxide,roughness,morphology,Surface structure},
  language     = {eng},
  number       = {1-2},
  pages        = {63--70},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Metalorganic Chemical Vapor Deposition of Anatase Titanium Dioxide on Si: Modifying the Interface by Pre-Oxidation.},
  url          = {http://dx.doi.org/10.1016/S0039-6028(03)00386-8},
  volume       = {530},
  year         = {2003},
}