Metalorganic Chemical Vapor Deposition of Anatase Titanium Dioxide on Si: Modifying the Interface by Pre-Oxidation.
Sandell, A ; Andersson, M P ; Johansson, Mikael LU ; Karlsson, P G ; Alfredsson, Y ; Schnadt, Joachim LU
; Siegbahn, H
and Uvdal, Per
LU
(2003)
In Surface Science
530(1-2).
p.63-70
- Abstract
- The formation of TiO2 films on clean and pre-oxidized Si(1 1 1) through chemical vapor deposition of titanium(IV) isopropoxide (TTIP) in ultra-high vacuum has been examined by synchrotron radiation photoelectron spectroscopy, X-ray absorption spectroscopy (XAS) and scanning tunneling microscopy. In both cases, TTIP deposition at 500 °C eventually results in an anatase TiO2 film with a carbon-free surface and the surface morphology of the anatase films is very similar. By using a novel way of combining photoemission and XAS data, it is demonstrated that the two situations have substantially different interfacial properties. Pre-oxidation of the surface at 500 °C passivates the surface so that the thickness of the amorphous TiSixOy interface... (More)
- The formation of TiO2 films on clean and pre-oxidized Si(1 1 1) through chemical vapor deposition of titanium(IV) isopropoxide (TTIP) in ultra-high vacuum has been examined by synchrotron radiation photoelectron spectroscopy, X-ray absorption spectroscopy (XAS) and scanning tunneling microscopy. In both cases, TTIP deposition at 500 °C eventually results in an anatase TiO2 film with a carbon-free surface and the surface morphology of the anatase films is very similar. By using a novel way of combining photoemission and XAS data, it is demonstrated that the two situations have substantially different interfacial properties. Pre-oxidation of the surface at 500 °C passivates the surface so that the thickness of the amorphous TiSixOy interface layer decreases from 30–35 to 15–25 Å and eliminates the formation of interfacial carbon completely. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/128214
- author
- Sandell, A
; Andersson, M P
; Johansson, Mikael
LU
; Karlsson, P G
; Alfredsson, Y
; Schnadt, Joachim
LU
; Siegbahn, H
and Uvdal, Per
LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- X-ray absorption spectroscopy, Chemical vapor deposition, Synchrotron radiation photoelectron spectroscopy, Growth, Low index single crystal surfaces, Scanning tunneling microscopy, Semiconductor–insulator interfaces, Metal–oxide–semiconductor (MOS) structures, Interface states, and topography, Titanium oxide, roughness, morphology, Surface structure
- in
- Surface Science
- volume
- 530
- issue
- 1-2
- pages
- 63 - 70
- publisher
- Elsevier
- external identifiers
-
- wos:000182469700011
- scopus:0037457552
- ISSN
- 0039-6028
- DOI
- 10.1016/S0039-6028(03)00386-8
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Chemical Physics (S) (011001060), Department of Physics (011013000)
- id
- b98c405d-8fd9-431f-b6b5-9812722bb713 (old id 128214)
- date added to LUP
- 2016-04-01 16:55:08
- date last changed
- 2022-04-07 19:37:47
@article{b98c405d-8fd9-431f-b6b5-9812722bb713,
abstract = {{The formation of TiO2 films on clean and pre-oxidized Si(1 1 1) through chemical vapor deposition of titanium(IV) isopropoxide (TTIP) in ultra-high vacuum has been examined by synchrotron radiation photoelectron spectroscopy, X-ray absorption spectroscopy (XAS) and scanning tunneling microscopy. In both cases, TTIP deposition at 500 °C eventually results in an anatase TiO2 film with a carbon-free surface and the surface morphology of the anatase films is very similar. By using a novel way of combining photoemission and XAS data, it is demonstrated that the two situations have substantially different interfacial properties. Pre-oxidation of the surface at 500 °C passivates the surface so that the thickness of the amorphous TiSixOy interface layer decreases from 30–35 to 15–25 Å and eliminates the formation of interfacial carbon completely.}},
author = {{Sandell, A and Andersson, M P and Johansson, Mikael and Karlsson, P G and Alfredsson, Y and Schnadt, Joachim and Siegbahn, H and Uvdal, Per}},
issn = {{0039-6028}},
keywords = {{X-ray absorption spectroscopy; Chemical vapor deposition; Synchrotron radiation photoelectron spectroscopy; Growth; Low index single crystal surfaces; Scanning tunneling microscopy; Semiconductor–insulator interfaces; Metal–oxide–semiconductor (MOS) structures; Interface states; and topography; Titanium oxide; roughness; morphology; Surface structure}},
language = {{eng}},
number = {{1-2}},
pages = {{63--70}},
publisher = {{Elsevier}},
series = {{Surface Science}},
title = {{Metalorganic Chemical Vapor Deposition of Anatase Titanium Dioxide on Si: Modifying the Interface by Pre-Oxidation.}},
url = {{http://dx.doi.org/10.1016/S0039-6028(03)00386-8}},
doi = {{10.1016/S0039-6028(03)00386-8}},
volume = {{530}},
year = {{2003}},
}