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GaMnAs: Layers, Wires and Dots

Sadowski, Janusz LU (2008) 37th International School on the Physics of Semiconducting Compounds 114(5). p.1001-1012
Abstract
Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAS(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich it-InAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
ACTA PHYSICA POLONICA A
volume
114
issue
5
pages
1001 - 1012
publisher
Polish Academy of Sciences
conference name
37th International School on the Physics of Semiconducting Compounds
conference dates
2008-06-07 - 2008-06-13
external identifiers
  • wos:000260435700006
  • scopus:54949140064
ISSN
0587-4246
language
English
LU publication?
yes
id
163486f5-b321-43f0-8e55-57b1669fb264 (old id 1284055)
date added to LUP
2016-04-01 12:51:45
date last changed
2022-04-06 01:16:23
@inproceedings{163486f5-b321-43f0-8e55-57b1669fb264,
  abstract     = {{Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAS(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich it-InAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.}},
  author       = {{Sadowski, Janusz}},
  booktitle    = {{ACTA PHYSICA POLONICA A}},
  issn         = {{0587-4246}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{1001--1012}},
  publisher    = {{Polish Academy of Sciences}},
  title        = {{GaMnAs: Layers, Wires and Dots}},
  volume       = {{114}},
  year         = {{2008}},
}