Epitaxial Integration of Nanowires in Microsystems by Local Micrometer-Scale Vapor-Phase Epitaxy
(2008) In Small 4(10). p.1741-1746- Abstract
- Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the... (More)
- Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1284089
- author
- Molhave, Kristian ; Wacaser, Brent LU ; Petersen, Dirch Hjorth ; Wagner, Jakob LU ; Samuelson, Lars LU and Boggild, Peter
- organization
- publishing date
- 2008
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- silicon, nanowires, chemical vapor deposition, epitaxy
- in
- Small
- volume
- 4
- issue
- 10
- pages
- 1741 - 1746
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- wos:000260201700029
- scopus:55349126428
- ISSN
- 1613-6829
- DOI
- 10.1002/smll.200800366
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 7177d9c3-0f8f-45e2-95ca-2ccb9d7eb400 (old id 1284089)
- date added to LUP
- 2016-04-01 12:26:50
- date last changed
- 2022-03-29 01:02:40
@article{7177d9c3-0f8f-45e2-95ca-2ccb9d7eb400, abstract = {{Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation.}}, author = {{Molhave, Kristian and Wacaser, Brent and Petersen, Dirch Hjorth and Wagner, Jakob and Samuelson, Lars and Boggild, Peter}}, issn = {{1613-6829}}, keywords = {{silicon; nanowires; chemical vapor deposition; epitaxy}}, language = {{eng}}, number = {{10}}, pages = {{1741--1746}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Small}}, title = {{Epitaxial Integration of Nanowires in Microsystems by Local Micrometer-Scale Vapor-Phase Epitaxy}}, url = {{http://dx.doi.org/10.1002/smll.200800366}}, doi = {{10.1002/smll.200800366}}, volume = {{4}}, year = {{2008}}, }