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Epitaxial Integration of Nanowires in Microsystems by Local Micrometer-Scale Vapor-Phase Epitaxy

Molhave, Kristian; Wacaser, Brent LU ; Petersen, Dirch Hjorth; Wagner, Jakob LU ; Samuelson, Lars LU and Boggild, Peter (2008) In Small 4(10). p.1741-1746
Abstract
Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the... (More)
Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
silicon, nanowires, chemical vapor deposition, epitaxy
in
Small
volume
4
issue
10
pages
1741 - 1746
publisher
John Wiley & Sons
external identifiers
  • wos:000260201700029
  • scopus:55349126428
ISSN
1613-6829
DOI
10.1002/smll.200800366
language
English
LU publication?
yes
id
7177d9c3-0f8f-45e2-95ca-2ccb9d7eb400 (old id 1284089)
date added to LUP
2009-02-09 10:32:10
date last changed
2017-08-27 04:19:25
@article{7177d9c3-0f8f-45e2-95ca-2ccb9d7eb400,
  abstract     = {Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation.},
  author       = {Molhave, Kristian and Wacaser, Brent and Petersen, Dirch Hjorth and Wagner, Jakob and Samuelson, Lars and Boggild, Peter},
  issn         = {1613-6829},
  keyword      = {silicon,nanowires,chemical vapor deposition,epitaxy},
  language     = {eng},
  number       = {10},
  pages        = {1741--1746},
  publisher    = {John Wiley & Sons},
  series       = {Small},
  title        = {Epitaxial Integration of Nanowires in Microsystems by Local Micrometer-Scale Vapor-Phase Epitaxy},
  url          = {http://dx.doi.org/10.1002/smll.200800366},
  volume       = {4},
  year         = {2008},
}