Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn) As nanostructures
(2008) 12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors 19. p.111-114- Abstract
- Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga, Mn) As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1284635
- author
- Wosinski, Tadeusz ; Figielski, Tadeusz ; Morawski, Andrzej ; Makosa, Andrzej ; Osinniy, Viktor ; Wrobel, Jerzy and Sadowski, Janusz LU
- organization
- publishing date
- 2008
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- volume
- 19
- pages
- 111 - 114
- publisher
- Springer
- conference name
- 12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
- conference dates
- 2007-09-09 - 2007-09-13
- external identifiers
-
- wos:000260288100023
- scopus:53749086327
- ISSN
- 0957-4522
- DOI
- 10.1007/s10854-007-9516-x
- language
- English
- LU publication?
- yes
- id
- 037e1b1e-ff42-4af1-b044-1730e4333ddb (old id 1284635)
- date added to LUP
- 2016-04-01 14:26:46
- date last changed
- 2022-01-28 00:40:50
@inproceedings{037e1b1e-ff42-4af1-b044-1730e4333ddb, abstract = {{Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga, Mn) As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.}}, author = {{Wosinski, Tadeusz and Figielski, Tadeusz and Morawski, Andrzej and Makosa, Andrzej and Osinniy, Viktor and Wrobel, Jerzy and Sadowski, Janusz}}, booktitle = {{JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}}, issn = {{0957-4522}}, language = {{eng}}, pages = {{111--114}}, publisher = {{Springer}}, title = {{Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn) As nanostructures}}, url = {{http://dx.doi.org/10.1007/s10854-007-9516-x}}, doi = {{10.1007/s10854-007-9516-x}}, volume = {{19}}, year = {{2008}}, }