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Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn) As nanostructures

Wosinski, Tadeusz; Figielski, Tadeusz; Morawski, Andrzej; Makosa, Andrzej; Osinniy, Viktor; Wrobel, Jerzy and Sadowski, Janusz LU (2008) 12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors In JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 19. p.111-114
Abstract
Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga, Mn) As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
volume
19
pages
111 - 114
publisher
Springer
conference name
12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
external identifiers
  • wos:000260288100023
  • scopus:53749086327
ISSN
0957-4522
DOI
10.1007/s10854-007-9516-x
language
English
LU publication?
yes
id
037e1b1e-ff42-4af1-b044-1730e4333ddb (old id 1284635)
date added to LUP
2009-02-10 14:05:13
date last changed
2017-01-01 06:14:56
@inproceedings{037e1b1e-ff42-4af1-b044-1730e4333ddb,
  abstract     = {Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga, Mn) As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.},
  author       = {Wosinski, Tadeusz and Figielski, Tadeusz and Morawski, Andrzej and Makosa, Andrzej and Osinniy, Viktor and Wrobel, Jerzy and Sadowski, Janusz},
  booktitle    = {JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS},
  issn         = {0957-4522},
  language     = {eng},
  pages        = {111--114},
  publisher    = {Springer},
  title        = {Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn) As nanostructures},
  url          = {http://dx.doi.org/10.1007/s10854-007-9516-x},
  volume       = {19},
  year         = {2008},
}