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Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP

Frimmer, Martin ; Sun, Jie LU ; Maximov, Ivan LU and Xu, Hongxing LU (2008) In Applied Physics Letters 93(13).
Abstract
Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
93
issue
13
article number
133110
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000259794100085
  • scopus:53349151425
ISSN
0003-6951
DOI
10.1063/1.2993181
language
English
LU publication?
yes
id
ba842518-561b-45d2-b242-621f8b2e1c66 (old id 1285894)
date added to LUP
2016-04-01 12:27:40
date last changed
2022-01-27 05:21:08
@article{ba842518-561b-45d2-b242-621f8b2e1c66,
  abstract     = {{Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.}},
  author       = {{Frimmer, Martin and Sun, Jie and Maximov, Ivan and Xu, Hongxing}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{13}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP}},
  url          = {{http://dx.doi.org/10.1063/1.2993181}},
  doi          = {{10.1063/1.2993181}},
  volume       = {{93}},
  year         = {{2008}},
}