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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Sun, Jie LU ; Larsson, Marcus LU ; Maximov, Ivan LU ; Hardtdegen, Hilde and Xu, Hongqi LU (2009) In Applied Physics Letters 94(4).
Abstract
Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
quantum, well devices, semiconductor quantum dots, quantum interference devices, nanotechnology, indium compounds, III-V semiconductors, high-k dielectric thin films, hafnium compounds, g-factor, gallium arsenide, atomic layer deposition, Coulomb blockade
in
Applied Physics Letters
volume
94
issue
4
publisher
American Institute of Physics
external identifiers
  • wos:000262971800059
  • scopus:59349120065
ISSN
0003-6951
DOI
10.1063/1.3077188
language
English
LU publication?
yes
id
9ef1290c-e035-42ae-959a-31055e85b8bc (old id 1311595)
date added to LUP
2009-03-16 15:55:42
date last changed
2017-07-23 03:54:40
@article{9ef1290c-e035-42ae-959a-31055e85b8bc,
  abstract     = {Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.},
  articleno    = {042114},
  author       = {Sun, Jie and Larsson, Marcus and Maximov, Ivan and Hardtdegen, Hilde and Xu, Hongqi},
  issn         = {0003-6951},
  keyword      = {quantum,well devices,semiconductor quantum dots,quantum interference devices,nanotechnology,indium compounds,III-V semiconductors,high-k dielectric thin films,hafnium compounds,g-factor,gallium arsenide,atomic layer deposition,Coulomb blockade},
  language     = {eng},
  number       = {4},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric},
  url          = {http://dx.doi.org/10.1063/1.3077188},
  volume       = {94},
  year         = {2009},
}