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Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

Heiss, Martin; Gustafsson, Anders LU ; Conesa-Boj, Sonia; Peiro, Francesca; Morante, Joan Ramon; Abstreiter, G.; Arbiol, Jordi; Samuelson, Lars LU and Morral, Anna Fontcuberta i (2009) In Nanotechnology 20(7).
Abstract
Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the growth it was possible to vary the effective indium content up to x = 5%, as deduced from photoluminescence measurements. We have analyzed the dependence of the alloy concentration on the growth conditions and present a simple model for the growth. The heterostructures grown with the method presented were spatially mapped along the wires with confocal microphotoluminescence and cathodoluminescence. It was found as expected that the emission of GaAs/InxGa1-xAs/GaAs heterostructures is... (More)
Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the growth it was possible to vary the effective indium content up to x = 5%, as deduced from photoluminescence measurements. We have analyzed the dependence of the alloy concentration on the growth conditions and present a simple model for the growth. The heterostructures grown with the method presented were spatially mapped along the wires with confocal microphotoluminescence and cathodoluminescence. It was found as expected that the emission of GaAs/InxGa1-xAs/GaAs heterostructures is localized. This work is important for the use of an external catalyst-free growth of complex axial heterostructures and related opto-electronic devices that facilitates its possible integration in the device or system fabrication processes. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
20
issue
7
publisher
IOP Publishing
external identifiers
  • wos:000262786100020
  • scopus:65349134387
ISSN
0957-4484
DOI
10.1088/0957-4484/20/7/075603
language
English
LU publication?
yes
id
21dda7c8-bd04-4227-bb66-898617d52b2e (old id 1312181)
date added to LUP
2009-03-13 15:06:33
date last changed
2017-11-12 03:18:27
@article{21dda7c8-bd04-4227-bb66-898617d52b2e,
  abstract     = {Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the growth it was possible to vary the effective indium content up to x = 5%, as deduced from photoluminescence measurements. We have analyzed the dependence of the alloy concentration on the growth conditions and present a simple model for the growth. The heterostructures grown with the method presented were spatially mapped along the wires with confocal microphotoluminescence and cathodoluminescence. It was found as expected that the emission of GaAs/InxGa1-xAs/GaAs heterostructures is localized. This work is important for the use of an external catalyst-free growth of complex axial heterostructures and related opto-electronic devices that facilitates its possible integration in the device or system fabrication processes.},
  articleno    = {075603},
  author       = {Heiss, Martin and Gustafsson, Anders and Conesa-Boj, Sonia and Peiro, Francesca and Morante, Joan Ramon and Abstreiter, G. and Arbiol, Jordi and Samuelson, Lars and Morral, Anna Fontcuberta i},
  issn         = {0957-4484},
  language     = {eng},
  number       = {7},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures},
  url          = {http://dx.doi.org/10.1088/0957-4484/20/7/075603},
  volume       = {20},
  year         = {2009},
}