Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Direct observation of atomic scale surface relaxation in ortho twin structures in GaAs by XSTM

Bolinsson, J ; Ouattara, Lassana LU ; Hofer, W. A. ; Sköld, Niklas LU ; Lundgren, Edvin LU ; Gustafsson, Anders LU and Mikkelsen, Anders LU (2009) In Journal of Physics: Condensed Matter 21(5).
Abstract
We have studied the (110) GaAs surface of a structure containing ortho twins by cross-sectional scanning tunnelling microscopy and we have compared the experimental results with ab initio density functional theory calculations and STM simulations. Both experimentally and theoretically we find that the surface of different twin crystallites are significantly displaced with respect to each other, parallel to the twin boundary. This result is explained by a surface relaxation of the atoms in the (110) GaAs surface and the difference between the atomic configuration of the ortho twins.
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physics: Condensed Matter
volume
21
issue
5
article number
055404
publisher
IOP Publishing
external identifiers
  • wos:000262375100017
  • scopus:63649120252
  • pmid:21817302
ISSN
1361-648X
DOI
10.1088/0953-8984/21/5/055404
language
English
LU publication?
yes
id
d9383e8e-edcb-4659-91ba-98fe3c18fecd (old id 1312762)
date added to LUP
2016-04-01 14:15:45
date last changed
2021-09-22 03:47:38
@article{d9383e8e-edcb-4659-91ba-98fe3c18fecd,
  abstract     = {We have studied the (110) GaAs surface of a structure containing ortho twins by cross-sectional scanning tunnelling microscopy and we have compared the experimental results with ab initio density functional theory calculations and STM simulations. Both experimentally and theoretically we find that the surface of different twin crystallites are significantly displaced with respect to each other, parallel to the twin boundary. This result is explained by a surface relaxation of the atoms in the (110) GaAs surface and the difference between the atomic configuration of the ortho twins.},
  author       = {Bolinsson, J and Ouattara, Lassana and Hofer, W. A. and Sköld, Niklas and Lundgren, Edvin and Gustafsson, Anders and Mikkelsen, Anders},
  issn         = {1361-648X},
  language     = {eng},
  number       = {5},
  publisher    = {IOP Publishing},
  series       = {Journal of Physics: Condensed Matter},
  title        = {Direct observation of atomic scale surface relaxation in ortho twin structures in GaAs by XSTM},
  url          = {http://dx.doi.org/10.1088/0953-8984/21/5/055404},
  doi          = {10.1088/0953-8984/21/5/055404},
  volume       = {21},
  year         = {2009},
}