Advanced

Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures

Wosinski, T.; Figielski, T.; Morawski, A.; Makosa, A.; Szymczak, R.; Wrobel, J. and Sadowski, Janusz LU (2008) 4th MAG-EL-MAT Members Meeting 2006 In Materials Sceince - Poland 26(4). p.1097-1104
Abstract
Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing... (More)
Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
nanostructure, ferromagnetic semiconductor, magnetoresistance, domain wall
in
Materials Sceince - Poland
volume
26
issue
4
pages
1097 - 1104
publisher
Oficyny Wydawniczej Politechniki Wrocławskiej
conference name
4th MAG-EL-MAT Members Meeting 2006
external identifiers
  • wos:000262458900042
  • scopus:58149459146
ISSN
0137-1339
2083-134X
language
English
LU publication?
yes
id
b8a99a39-4c91-488b-b32d-a0ecb5026a71 (old id 1376040)
date added to LUP
2009-04-17 09:51:30
date last changed
2017-01-01 04:48:23
@inproceedings{b8a99a39-4c91-488b-b32d-a0ecb5026a71,
  abstract     = {Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.},
  author       = {Wosinski, T. and Figielski, T. and Morawski, A. and Makosa, A. and Szymczak, R. and Wrobel, J. and Sadowski, Janusz},
  booktitle    = {Materials Sceince - Poland},
  issn         = {0137-1339},
  keyword      = {nanostructure,ferromagnetic semiconductor,magnetoresistance,domain wall},
  language     = {eng},
  number       = {4},
  pages        = {1097--1104},
  publisher    = {Oficyny Wydawniczej Politechniki Wrocławskiej},
  title        = {Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures},
  volume       = {26},
  year         = {2008},
}