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X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires

Eymery, J.; Favre-Nicolin, V.; Fröberg, Linus LU and Samuelson, Lars LU (2009) In Applied Physics Letters 94(13).
Abstract
Wrap-gate (111) InAs nanowires (NWs) were studied after HfO2 dielectric coating and Cr metallic deposition by a combination of grazing incidence x-ray techniques. In-plane and out-of-plane x-ray diffraction (crystal truncation rod analysis) allow determining the strain tensor. The longitudinal contraction, increasing with HfO2 and Cr deposition, is significantly larger than the radial dilatation. For the Cr coating, the contraction along the growth axis is quite large (-0.95%), and the longitudinal/radial deformation ratio is >10, which may play a role on the NW transport properties. Small angle x-ray scattering shows a smoothening of the initial hexagonal bare InAs NW shape and gives the respective core/shell thicknesses, which are... (More)
Wrap-gate (111) InAs nanowires (NWs) were studied after HfO2 dielectric coating and Cr metallic deposition by a combination of grazing incidence x-ray techniques. In-plane and out-of-plane x-ray diffraction (crystal truncation rod analysis) allow determining the strain tensor. The longitudinal contraction, increasing with HfO2 and Cr deposition, is significantly larger than the radial dilatation. For the Cr coating, the contraction along the growth axis is quite large (-0.95%), and the longitudinal/radial deformation ratio is >10, which may play a role on the NW transport properties. Small angle x-ray scattering shows a smoothening of the initial hexagonal bare InAs NW shape and gives the respective core/shell thicknesses, which are compared to flat surface values. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
X-ray diffraction, nanotechnology, indium compounds, III-V semiconductors, compounds, hafnium, dielectric materials, deformation, chromium, coatings, semiconductor heterojunctions, nanowires
in
Applied Physics Letters
volume
94
issue
13
publisher
American Institute of Physics
external identifiers
  • wos:000264888500022
  • scopus:64149120255
ISSN
0003-6951
DOI
10.1063/1.3114369
language
English
LU publication?
yes
id
8a6be61b-6f70-4a52-a8e4-6a3e2dba9253 (old id 1400773)
date added to LUP
2009-06-12 10:41:31
date last changed
2017-01-01 05:08:30
@article{8a6be61b-6f70-4a52-a8e4-6a3e2dba9253,
  abstract     = {Wrap-gate (111) InAs nanowires (NWs) were studied after HfO2 dielectric coating and Cr metallic deposition by a combination of grazing incidence x-ray techniques. In-plane and out-of-plane x-ray diffraction (crystal truncation rod analysis) allow determining the strain tensor. The longitudinal contraction, increasing with HfO2 and Cr deposition, is significantly larger than the radial dilatation. For the Cr coating, the contraction along the growth axis is quite large (-0.95%), and the longitudinal/radial deformation ratio is >10, which may play a role on the NW transport properties. Small angle x-ray scattering shows a smoothening of the initial hexagonal bare InAs NW shape and gives the respective core/shell thicknesses, which are compared to flat surface values.},
  articleno    = {131911},
  author       = {Eymery, J. and Favre-Nicolin, V. and Fröberg, Linus and Samuelson, Lars},
  issn         = {0003-6951},
  keyword      = {X-ray diffraction,nanotechnology,indium compounds,III-V semiconductors,compounds,hafnium,dielectric materials,deformation,chromium,coatings,semiconductor heterojunctions,nanowires},
  language     = {eng},
  number       = {13},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires},
  url          = {http://dx.doi.org/10.1063/1.3114369},
  volume       = {94},
  year         = {2009},
}