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Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Sun, Jie LU ; Zhou, Dayong; Li, Ruoyuan; Zhao, Chang; Ye, Xiaoling; Xu, Bo; Chen, Yonghai and Wang, Zhanguo (2007) In Modern Physics Letters B 21(14). p.859-866
Abstract
Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The... (More)
Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
scanning electron microscopy, III-V semiconductors, quantum dots, selective etching
in
Modern Physics Letters B
volume
21
issue
14
pages
859 - 866
publisher
World Scientific
external identifiers
  • wos:000251890300004
  • scopus:34250208474
ISSN
0217-9849
DOI
10.1142/S0217984907013262
language
English
LU publication?
yes
id
be94420b-fbd7-41e9-a20a-fc93d2d59838 (old id 1409042)
date added to LUP
2009-06-01 16:24:59
date last changed
2017-01-01 07:25:10
@article{be94420b-fbd7-41e9-a20a-fc93d2d59838,
  abstract     = {Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.},
  author       = {Sun, Jie and Zhou, Dayong and Li, Ruoyuan and Zhao, Chang and Ye, Xiaoling and Xu, Bo and Chen, Yonghai and Wang, Zhanguo},
  issn         = {0217-9849},
  keyword      = {scanning electron microscopy,III-V semiconductors,quantum dots,selective etching},
  language     = {eng},
  number       = {14},
  pages        = {859--866},
  publisher    = {World Scientific},
  series       = {Modern Physics Letters B},
  title        = {Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers},
  url          = {http://dx.doi.org/10.1142/S0217984907013262},
  volume       = {21},
  year         = {2007},
}