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Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers

Desrat, W.; Kamara, S.; Terki, F.; Charar, S.; Sadowski, Janusz LU and Maude, D. K. (2009) In Semiconductor Science and Technology 24(6).
Abstract
Antisymmetric magneto-resistance anomalies generated by a reversal of the magnetization are studied in a number of GaMnAs/InGaAs layers with out-of-plane (easy axis) magnetization. The anomalies occur independent of the magnetic field orientation. This shows, that once a magnetic domain with reversed magnetization is nucleated, simply the presence of the domain wall between the longitudinal contacts is sufficient to give rise to the anomaly. Very different shapes for magneto-resistance anomaly can be observed experimentally depending upon the sample. They reflect the various magnetic domain structures present inside the layers during the magnetization reversal process.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Semiconductor Science and Technology
volume
24
issue
6
publisher
IOP Publishing
external identifiers
  • wos:000266287000019
  • scopus:78349255881
ISSN
0268-1242
DOI
10.1088/0268-1242/24/6/065011
language
English
LU publication?
yes
id
57791107-bc32-4798-9851-a28fe7d1b6ab (old id 1424221)
date added to LUP
2009-07-02 17:02:02
date last changed
2017-01-01 06:06:02
@article{57791107-bc32-4798-9851-a28fe7d1b6ab,
  abstract     = {Antisymmetric magneto-resistance anomalies generated by a reversal of the magnetization are studied in a number of GaMnAs/InGaAs layers with out-of-plane (easy axis) magnetization. The anomalies occur independent of the magnetic field orientation. This shows, that once a magnetic domain with reversed magnetization is nucleated, simply the presence of the domain wall between the longitudinal contacts is sufficient to give rise to the anomaly. Very different shapes for magneto-resistance anomaly can be observed experimentally depending upon the sample. They reflect the various magnetic domain structures present inside the layers during the magnetization reversal process.},
  author       = {Desrat, W. and Kamara, S. and Terki, F. and Charar, S. and Sadowski, Janusz and Maude, D. K.},
  issn         = {0268-1242},
  language     = {eng},
  number       = {6},
  publisher    = {IOP Publishing},
  series       = {Semiconductor Science and Technology},
  title        = {Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers},
  url          = {http://dx.doi.org/10.1088/0268-1242/24/6/065011},
  volume       = {24},
  year         = {2009},
}