Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers
(2009) In Semiconductor Science and Technology 24(6).- Abstract
- Antisymmetric magneto-resistance anomalies generated by a reversal of the magnetization are studied in a number of GaMnAs/InGaAs layers with out-of-plane (easy axis) magnetization. The anomalies occur independent of the magnetic field orientation. This shows, that once a magnetic domain with reversed magnetization is nucleated, simply the presence of the domain wall between the longitudinal contacts is sufficient to give rise to the anomaly. Very different shapes for magneto-resistance anomaly can be observed experimentally depending upon the sample. They reflect the various magnetic domain structures present inside the layers during the magnetization reversal process.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1424221
- author
- Desrat, W. ; Kamara, S. ; Terki, F. ; Charar, S. ; Sadowski, Janusz LU and Maude, D. K.
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Semiconductor Science and Technology
- volume
- 24
- issue
- 6
- publisher
- IOP Publishing
- external identifiers
-
- wos:000266287000019
- scopus:78349255881
- ISSN
- 0268-1242
- DOI
- 10.1088/0268-1242/24/6/065011
- language
- English
- LU publication?
- yes
- id
- 57791107-bc32-4798-9851-a28fe7d1b6ab (old id 1424221)
- date added to LUP
- 2016-04-01 14:10:40
- date last changed
- 2022-02-19 17:28:20
@article{57791107-bc32-4798-9851-a28fe7d1b6ab, abstract = {{Antisymmetric magneto-resistance anomalies generated by a reversal of the magnetization are studied in a number of GaMnAs/InGaAs layers with out-of-plane (easy axis) magnetization. The anomalies occur independent of the magnetic field orientation. This shows, that once a magnetic domain with reversed magnetization is nucleated, simply the presence of the domain wall between the longitudinal contacts is sufficient to give rise to the anomaly. Very different shapes for magneto-resistance anomaly can be observed experimentally depending upon the sample. They reflect the various magnetic domain structures present inside the layers during the magnetization reversal process.}}, author = {{Desrat, W. and Kamara, S. and Terki, F. and Charar, S. and Sadowski, Janusz and Maude, D. K.}}, issn = {{0268-1242}}, language = {{eng}}, number = {{6}}, publisher = {{IOP Publishing}}, series = {{Semiconductor Science and Technology}}, title = {{Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers}}, url = {{http://dx.doi.org/10.1088/0268-1242/24/6/065011}}, doi = {{10.1088/0268-1242/24/6/065011}}, volume = {{24}}, year = {{2009}}, }