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The effect of a material growth technique on ion-implanted Mn diffusion in GaAs

Koskelo, O.; Raisanen, J.; Tuomisto, F. and Sadowski, Janusz LU (2009) In Semiconductor Science and Technology 24(4).
Abstract
Diffusion of ion-implanted Mn in semi-insulating (SI) and liquid encapsulated Czochralski (LEC)-grown GaAs has been determined employing the modified radiotracer technique. The effect of the growth technique and conditions on Mn diffusion in low temperature molecular beam epitaxy (LT-MBE)-grown GaAs has also been studied. Two distinct diffusion components appear in ion-implanted Mn diffusion in GaAs: slow and fast. As the diffusivity for the SI material is slightly higher than that for the LT-grown material, it is observed that the diffusivity of the fast component retards with increasing initial concentrations of Ga sublattice defects. At the same time the Mn concentration in the tail part of the diffusion profile is higher in the... (More)
Diffusion of ion-implanted Mn in semi-insulating (SI) and liquid encapsulated Czochralski (LEC)-grown GaAs has been determined employing the modified radiotracer technique. The effect of the growth technique and conditions on Mn diffusion in low temperature molecular beam epitaxy (LT-MBE)-grown GaAs has also been studied. Two distinct diffusion components appear in ion-implanted Mn diffusion in GaAs: slow and fast. As the diffusivity for the SI material is slightly higher than that for the LT-grown material, it is observed that the diffusivity of the fast component retards with increasing initial concentrations of Ga sublattice defects. At the same time the Mn concentration in the tail part of the diffusion profile is higher in the LT-grown material. Ga vacancy-assisted clustering of Mn is proposed as a likely reason for the observed effects. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Semiconductor Science and Technology
volume
24
issue
4
publisher
IOP Publishing
external identifiers
  • wos:000266052900012
  • scopus:68849117657
ISSN
0268-1242
DOI
10.1088/0268-1242/24/4/045011
language
English
LU publication?
yes
id
2b5d8ae2-bed6-4a57-ae57-cf353adaeb84 (old id 1425511)
date added to LUP
2009-07-01 15:26:04
date last changed
2017-01-01 06:15:37
@article{2b5d8ae2-bed6-4a57-ae57-cf353adaeb84,
  abstract     = {Diffusion of ion-implanted Mn in semi-insulating (SI) and liquid encapsulated Czochralski (LEC)-grown GaAs has been determined employing the modified radiotracer technique. The effect of the growth technique and conditions on Mn diffusion in low temperature molecular beam epitaxy (LT-MBE)-grown GaAs has also been studied. Two distinct diffusion components appear in ion-implanted Mn diffusion in GaAs: slow and fast. As the diffusivity for the SI material is slightly higher than that for the LT-grown material, it is observed that the diffusivity of the fast component retards with increasing initial concentrations of Ga sublattice defects. At the same time the Mn concentration in the tail part of the diffusion profile is higher in the LT-grown material. Ga vacancy-assisted clustering of Mn is proposed as a likely reason for the observed effects.},
  author       = {Koskelo, O. and Raisanen, J. and Tuomisto, F. and Sadowski, Janusz},
  issn         = {0268-1242},
  language     = {eng},
  number       = {4},
  publisher    = {IOP Publishing},
  series       = {Semiconductor Science and Technology},
  title        = {The effect of a material growth technique on ion-implanted Mn diffusion in GaAs},
  url          = {http://dx.doi.org/10.1088/0268-1242/24/4/045011},
  volume       = {24},
  year         = {2009},
}