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Low temperature Ga surface diffusion from focused ion beam milled grooves.

Mikkelsen, Anders LU ; Hilner, Emelie LU ; Andersen, Jesper N LU ; Ghatnekar-Nilsson, Sara LU ; Montelius, Lars LU and Zakharov, Alexei LU (2009) In Nanotechnology 20(32).
Abstract
Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-ray photoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). We analyze the surface chemistry of the FIB structures measuring the Ga presence in the top layers of the milled grooves and morphological defects inside the grooves. The Ga is initially strictly confined to the grooves. However, annealing at temperatures as low as 150 degrees C leads to rapid and significant Ga surface diffusion from the FIB structures. The out-diffused Ga forms a thin layer extending up to several microns laterally in a non-regular pattern. The diffusion is significantly enhanced at small crystallites at the edges of the grooves. We explain the general... (More)
Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-ray photoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). We analyze the surface chemistry of the FIB structures measuring the Ga presence in the top layers of the milled grooves and morphological defects inside the grooves. The Ga is initially strictly confined to the grooves. However, annealing at temperatures as low as 150 degrees C leads to rapid and significant Ga surface diffusion from the FIB structures. The out-diffused Ga forms a thin layer extending up to several microns laterally in a non-regular pattern. The diffusion is significantly enhanced at small crystallites at the edges of the grooves. We explain the general behavior with an atomic scale model in which interstitial Ga in the milled areas diffuses out and substitutes silanol groups on the surface. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
20
issue
32
publisher
IOP Publishing
external identifiers
  • wos:000268179700006
  • pmid:19620748
  • scopus:70249127234
ISSN
0957-4484
DOI
10.1088/0957-4484/20/32/325304
language
English
LU publication?
yes
id
e7cd7437-3355-4a90-ab56-41be7a9f1306 (old id 1452928)
date added to LUP
2009-09-01 08:45:17
date last changed
2017-07-09 03:48:43
@article{e7cd7437-3355-4a90-ab56-41be7a9f1306,
  abstract     = {Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-ray photoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). We analyze the surface chemistry of the FIB structures measuring the Ga presence in the top layers of the milled grooves and morphological defects inside the grooves. The Ga is initially strictly confined to the grooves. However, annealing at temperatures as low as 150 degrees C leads to rapid and significant Ga surface diffusion from the FIB structures. The out-diffused Ga forms a thin layer extending up to several microns laterally in a non-regular pattern. The diffusion is significantly enhanced at small crystallites at the edges of the grooves. We explain the general behavior with an atomic scale model in which interstitial Ga in the milled areas diffuses out and substitutes silanol groups on the surface.},
  articleno    = {325304},
  author       = {Mikkelsen, Anders and Hilner, Emelie and Andersen, Jesper N and Ghatnekar-Nilsson, Sara and Montelius, Lars and Zakharov, Alexei},
  issn         = {0957-4484},
  language     = {eng},
  number       = {32},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Low temperature Ga surface diffusion from focused ion beam milled grooves.},
  url          = {http://dx.doi.org/10.1088/0957-4484/20/32/325304},
  volume       = {20},
  year         = {2009},
}