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Formation of epitaxial MnBi layers on (Ga,Mn)As

Adell, Johan LU ; Adell, Martin; Ulfat, Intikab; Ilver, Lars; Sadowski, Janusz LU and Kanski, Janusz (2009) In Physical Review B (Condensed Matter and Materials Physics) 80(7).
Abstract
The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semimagnetic semiconductors, ferromagnetic materials, surface reconstruction, photoelectron spectra, metallic epitaxial layers, manganese compounds, manganese alloys, magnetic epitaxial layers, magnetisation, bismuth alloys, gallium arsenide, core levels
in
Physical Review B (Condensed Matter and Materials Physics)
volume
80
issue
7
publisher
American Physical Society
external identifiers
  • wos:000269638900048
  • scopus:70149125388
ISSN
1098-0121
DOI
10.1103/PhysRevB.80.075204
language
English
LU publication?
yes
id
7cc007a2-8c35-4ce6-8f4f-2b8314041242 (old id 1458071)
alternative location
http://link.aps.org/doi/10.1103/PhysRevB.80.075204
date added to LUP
2009-08-31 08:47:58
date last changed
2017-02-02 10:25:50
@article{7cc007a2-8c35-4ce6-8f4f-2b8314041242,
  abstract     = {The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.},
  articleno    = {075204},
  author       = {Adell, Johan and Adell, Martin and Ulfat, Intikab and Ilver, Lars and Sadowski, Janusz and Kanski, Janusz},
  issn         = {1098-0121},
  keyword      = {semimagnetic semiconductors,ferromagnetic materials,surface reconstruction,photoelectron spectra,metallic epitaxial layers,manganese compounds,manganese alloys,magnetic epitaxial layers,magnetisation,bismuth alloys,gallium arsenide,core levels},
  language     = {eng},
  number       = {7},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Formation of epitaxial MnBi layers on (Ga,Mn)As},
  url          = {http://dx.doi.org/10.1103/PhysRevB.80.075204},
  volume       = {80},
  year         = {2009},
}