20 GHz Wavelet Generator Using a Gated Tunnel Diode
(2009) In IEEE Microwave and Wireless Components Letters 19(6). p.386-388- Abstract
- We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is demonstrated that as the gate tunes the magnitude of the output conductance, the oscillator may be switched on and off, creating short RF pulses. The shortest pulses generated are 500 ps long, the highest output power for the free running oscillator is -4.1 dBm, and the highest oscillation frequency is 22 GHz. Analytical expressions based on the van der Pol equation describing the pulse length and amplitude are presented. This technique is applicable for high frequency impulse radio UWB... (More)
- We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is demonstrated that as the gate tunes the magnitude of the output conductance, the oscillator may be switched on and off, creating short RF pulses. The shortest pulses generated are 500 ps long, the highest output power for the free running oscillator is -4.1 dBm, and the highest oscillation frequency is 22 GHz. Analytical expressions based on the van der Pol equation describing the pulse length and amplitude are presented. This technique is applicable for high frequency impulse radio UWB implementations. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1463178
- author
- Egard, Mikael LU ; Ärlelid, Mats LU ; Lind, Erik LU ; Astromskas, Gvidas LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- ultra-wideband (UWB), transistor, resonant tunneling, pulse generator, Impulse radio (IR), oscillator, wavelet generator
- in
- IEEE Microwave and Wireless Components Letters
- volume
- 19
- issue
- 6
- pages
- 386 - 388
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000267496300016
- scopus:67650465250
- ISSN
- 1531-1309
- DOI
- 10.1109/LMWC.2009.2020029
- language
- English
- LU publication?
- yes
- id
- e8d05cc6-7194-4365-a385-f5711a2195dd (old id 1463178)
- date added to LUP
- 2016-04-01 15:03:22
- date last changed
- 2022-01-28 03:54:06
@article{e8d05cc6-7194-4365-a385-f5711a2195dd,
abstract = {{We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is demonstrated that as the gate tunes the magnitude of the output conductance, the oscillator may be switched on and off, creating short RF pulses. The shortest pulses generated are 500 ps long, the highest output power for the free running oscillator is -4.1 dBm, and the highest oscillation frequency is 22 GHz. Analytical expressions based on the van der Pol equation describing the pulse length and amplitude are presented. This technique is applicable for high frequency impulse radio UWB implementations.}},
author = {{Egard, Mikael and Ärlelid, Mats and Lind, Erik and Astromskas, Gvidas and Wernersson, Lars-Erik}},
issn = {{1531-1309}},
keywords = {{ultra-wideband (UWB); transistor; resonant tunneling; pulse generator; Impulse radio (IR); oscillator; wavelet generator}},
language = {{eng}},
number = {{6}},
pages = {{386--388}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Microwave and Wireless Components Letters}},
title = {{20 GHz Wavelet Generator Using a Gated Tunnel Diode}},
url = {{http://dx.doi.org/10.1109/LMWC.2009.2020029}},
doi = {{10.1109/LMWC.2009.2020029}},
volume = {{19}},
year = {{2009}},
}