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20 GHz Wavelet Generator Using a Gated Tunnel Diode

Egard, Mikael LU ; Ärlelid, Mats LU ; Lind, Erik LU ; Astromskas, Gvidas LU and Wernersson, Lars-Erik LU (2009) In IEEE Microwave and Wireless Components Letters 19(6). p.386-388
Abstract
We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is demonstrated that as the gate tunes the magnitude of the output conductance, the oscillator may be switched on and off, creating short RF pulses. The shortest pulses generated are 500 ps long, the highest output power for the free running oscillator is -4.1 dBm, and the highest oscillation frequency is 22 GHz. Analytical expressions based on the van der Pol equation describing the pulse length and amplitude are presented. This technique is applicable for high frequency impulse radio UWB... (More)
We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is demonstrated that as the gate tunes the magnitude of the output conductance, the oscillator may be switched on and off, creating short RF pulses. The shortest pulses generated are 500 ps long, the highest output power for the free running oscillator is -4.1 dBm, and the highest oscillation frequency is 22 GHz. Analytical expressions based on the van der Pol equation describing the pulse length and amplitude are presented. This technique is applicable for high frequency impulse radio UWB implementations. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ultra-wideband (UWB), transistor, resonant tunneling, pulse generator, Impulse radio (IR), oscillator, wavelet generator
in
IEEE Microwave and Wireless Components Letters
volume
19
issue
6
pages
386 - 388
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000267496300016
  • scopus:67650465250
ISSN
1531-1309
DOI
10.1109/LMWC.2009.2020029
language
English
LU publication?
yes
id
e8d05cc6-7194-4365-a385-f5711a2195dd (old id 1463178)
date added to LUP
2009-08-17 14:10:47
date last changed
2017-01-01 06:34:37
@article{e8d05cc6-7194-4365-a385-f5711a2195dd,
  abstract     = {We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is demonstrated that as the gate tunes the magnitude of the output conductance, the oscillator may be switched on and off, creating short RF pulses. The shortest pulses generated are 500 ps long, the highest output power for the free running oscillator is -4.1 dBm, and the highest oscillation frequency is 22 GHz. Analytical expressions based on the van der Pol equation describing the pulse length and amplitude are presented. This technique is applicable for high frequency impulse radio UWB implementations.},
  author       = {Egard, Mikael and Ärlelid, Mats and Lind, Erik and Astromskas, Gvidas and Wernersson, Lars-Erik},
  issn         = {1531-1309},
  keyword      = {ultra-wideband (UWB),transistor,resonant tunneling,pulse generator,Impulse radio (IR),oscillator,wavelet generator},
  language     = {eng},
  number       = {6},
  pages        = {386--388},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Microwave and Wireless Components Letters},
  title        = {20 GHz Wavelet Generator Using a Gated Tunnel Diode},
  url          = {http://dx.doi.org/10.1109/LMWC.2009.2020029},
  volume       = {19},
  year         = {2009},
}