X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor
(2011) In Nano Letters 11(7). p.2875-2880- Abstract
For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/14d8cf85-e946-4c4f-aa58-b90e8e77fee1
- author
- publishing date
- 2011-07-13
- type
- Contribution to journal
- publication status
- published
- keywords
- finite element simulations, ordered island growth, semiconductor nanostructures, silicon germanium, structural investigations, X-ray nanodiffraction
- in
- Nano Letters
- volume
- 11
- issue
- 7
- pages
- 6 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:21627099
- scopus:79960234468
- ISSN
- 1530-6984
- DOI
- 10.1021/nl2013289
- language
- English
- LU publication?
- no
- id
- 14d8cf85-e946-4c4f-aa58-b90e8e77fee1
- date added to LUP
- 2021-12-15 11:48:51
- date last changed
- 2024-03-09 00:43:16
@article{14d8cf85-e946-4c4f-aa58-b90e8e77fee1, abstract = {{<p>For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.</p>}}, author = {{Hrauda, Nina and Zhang, Jianjun and Wintersberger, Eugen and Etzelstorfer, Tanja and Mandl, Bernhard and Stangl, Julian and Carbone, Dina and Holý, Vaclav and Jovanović, Vladimir and Biasotto, Cleber and Nanver, Lis K. and Moers, Jürgen and Grützmacher, Detlev and Bauer, Günther}}, issn = {{1530-6984}}, keywords = {{finite element simulations; ordered island growth; semiconductor nanostructures; silicon germanium; structural investigations; X-ray nanodiffraction}}, language = {{eng}}, month = {{07}}, number = {{7}}, pages = {{2875--2880}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor}}, url = {{http://dx.doi.org/10.1021/nl2013289}}, doi = {{10.1021/nl2013289}}, volume = {{11}}, year = {{2011}}, }