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X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Hrauda, Nina ; Zhang, Jianjun ; Wintersberger, Eugen ; Etzelstorfer, Tanja ; Mandl, Bernhard LU ; Stangl, Julian ; Carbone, Dina LU ; Holý, Vaclav ; Jovanović, Vladimir and Biasotto, Cleber , et al. (2011) In Nano Letters 11(7). p.2875-2880
Abstract

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.

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publishing date
type
Contribution to journal
publication status
published
keywords
finite element simulations, ordered island growth, semiconductor nanostructures, silicon germanium, structural investigations, X-ray nanodiffraction
in
Nano Letters
volume
11
issue
7
pages
6 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:79960234468
  • pmid:21627099
ISSN
1530-6984
DOI
10.1021/nl2013289
language
English
LU publication?
no
id
14d8cf85-e946-4c4f-aa58-b90e8e77fee1
date added to LUP
2021-12-15 11:48:51
date last changed
2024-03-09 00:43:16
@article{14d8cf85-e946-4c4f-aa58-b90e8e77fee1,
  abstract     = {{<p>For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.</p>}},
  author       = {{Hrauda, Nina and Zhang, Jianjun and Wintersberger, Eugen and Etzelstorfer, Tanja and Mandl, Bernhard and Stangl, Julian and Carbone, Dina and Holý, Vaclav and Jovanović, Vladimir and Biasotto, Cleber and Nanver, Lis K. and Moers, Jürgen and Grützmacher, Detlev and Bauer, Günther}},
  issn         = {{1530-6984}},
  keywords     = {{finite element simulations; ordered island growth; semiconductor nanostructures; silicon germanium; structural investigations; X-ray nanodiffraction}},
  language     = {{eng}},
  month        = {{07}},
  number       = {{7}},
  pages        = {{2875--2880}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor}},
  url          = {{http://dx.doi.org/10.1021/nl2013289}},
  doi          = {{10.1021/nl2013289}},
  volume       = {{11}},
  year         = {{2011}},
}