Photoemission from alpha and beta phases of the GaAs(001)-c(4 x 4) surface
(2009) In Surface Science 603(20). p.3088-3093- Abstract
- We prepared alpha- and beta surface phases of GaAs(0 0 1)-c(4 x 4) reconstruction by molecular beam epitaxy (MBE) using As-4 and As-2 molecular beams, respectively, and examined them by angle-resolved ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) with synchrotron radiation as an excitation source. The UPS valence band spectra and the XPS 3d core level data show pronounced differences corresponding to the surface composition and the atomic structure of the two phases, as proposed in the literature. In UPS, the beta phase is characterized by an intensive surface state 0.5 eV below the top of the valence band at low photon energy, while an analogous peak in the alpha phase spectra is missing. The... (More)
- We prepared alpha- and beta surface phases of GaAs(0 0 1)-c(4 x 4) reconstruction by molecular beam epitaxy (MBE) using As-4 and As-2 molecular beams, respectively, and examined them by angle-resolved ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) with synchrotron radiation as an excitation source. The UPS valence band spectra and the XPS 3d core level data show pronounced differences corresponding to the surface composition and the atomic structure of the two phases, as proposed in the literature. In UPS, the beta phase is characterized by an intensive surface state 0.5 eV below the top of the valence band at low photon energy, while an analogous peak in the alpha phase spectra is missing. The surface state is interpreted in terms of dangling bonds on As dimers. The As3d and Ga3d core level photoelectron lines exhibit phase-specific shapes as well as differences in the number, position and intensity of their deconvoluted components. The location of various atoms in the surface and subsurface layers is discussed; our photoemission results support models of the beta phase and the alpha phase with As-As dimers and Ga-As heterodimers, respectively. (C) 2009 Elsevier B.V. All rights reserved. (Less)
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https://lup.lub.lu.se/record/1505262
- author
- Jiricek, P. ; Cukr, M. ; Bartos, I. and Sadowski, Janusz LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- shift, Surface core level, Molecular beam epitaxy, photoelectron spectroscopy, Synchrotron radiation, Gallium arsenide, Angle resolved photoemission, Surface phase
- in
- Surface Science
- volume
- 603
- issue
- 20
- pages
- 3088 - 3093
- publisher
- Elsevier
- external identifiers
-
- wos:000271179600009
- scopus:70349630422
- ISSN
- 0039-6028
- DOI
- 10.1016/j.susc.2009.08.021
- language
- English
- LU publication?
- yes
- id
- 99ff57f9-b170-4e02-ad56-b41d74670759 (old id 1505262)
- date added to LUP
- 2016-04-01 14:57:12
- date last changed
- 2022-01-28 03:15:41
@article{99ff57f9-b170-4e02-ad56-b41d74670759,
abstract = {{We prepared alpha- and beta surface phases of GaAs(0 0 1)-c(4 x 4) reconstruction by molecular beam epitaxy (MBE) using As-4 and As-2 molecular beams, respectively, and examined them by angle-resolved ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) with synchrotron radiation as an excitation source. The UPS valence band spectra and the XPS 3d core level data show pronounced differences corresponding to the surface composition and the atomic structure of the two phases, as proposed in the literature. In UPS, the beta phase is characterized by an intensive surface state 0.5 eV below the top of the valence band at low photon energy, while an analogous peak in the alpha phase spectra is missing. The surface state is interpreted in terms of dangling bonds on As dimers. The As3d and Ga3d core level photoelectron lines exhibit phase-specific shapes as well as differences in the number, position and intensity of their deconvoluted components. The location of various atoms in the surface and subsurface layers is discussed; our photoemission results support models of the beta phase and the alpha phase with As-As dimers and Ga-As heterodimers, respectively. (C) 2009 Elsevier B.V. All rights reserved.}},
author = {{Jiricek, P. and Cukr, M. and Bartos, I. and Sadowski, Janusz}},
issn = {{0039-6028}},
keywords = {{shift; Surface core level; Molecular beam epitaxy; photoelectron spectroscopy; Synchrotron radiation; Gallium arsenide; Angle resolved photoemission; Surface phase}},
language = {{eng}},
number = {{20}},
pages = {{3088--3093}},
publisher = {{Elsevier}},
series = {{Surface Science}},
title = {{Photoemission from alpha and beta phases of the GaAs(001)-c(4 x 4) surface}},
url = {{http://dx.doi.org/10.1016/j.susc.2009.08.021}},
doi = {{10.1016/j.susc.2009.08.021}},
volume = {{603}},
year = {{2009}},
}