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TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates

Dluzewski, P.; Sadowski, Janusz LU ; Kret, S.; Dabrowski, J. and Sobczak, K. (2009) In Journal of Microscopy 236(2). p.115-118
Abstract
P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
TEM, nanowires, GaMnAs, MBE
in
Journal of Microscopy
volume
236
issue
2
pages
115 - 118
publisher
Wiley-Blackwell
external identifiers
  • wos:000271049100007
  • scopus:70350520386
ISSN
0022-2720
DOI
10.1111/j.1365-2818.2009.03255.x
language
English
LU publication?
yes
id
bacc4d0e-b952-47cf-b6d0-cccae08e44ff (old id 1505364)
date added to LUP
2009-11-24 11:56:24
date last changed
2017-01-01 06:06:11
@article{bacc4d0e-b952-47cf-b6d0-cccae08e44ff,
  abstract     = {P&gt;The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the &lt;&lt; 111 &gt;&gt; direction. NW with higher Mn concentrations grow along the &lt;&lt; 110 &gt;&gt; direction and reveal a branching structure. The main nanowire and branches grow along the &lt;&lt; 110 &gt;&gt; directions belonging to only one {111} plane.},
  author       = {Dluzewski, P. and Sadowski, Janusz and Kret, S. and Dabrowski, J. and Sobczak, K.},
  issn         = {0022-2720},
  keyword      = {TEM,nanowires,GaMnAs,MBE},
  language     = {eng},
  number       = {2},
  pages        = {115--118},
  publisher    = {Wiley-Blackwell},
  series       = {Journal of Microscopy},
  title        = {TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates},
  url          = {http://dx.doi.org/10.1111/j.1365-2818.2009.03255.x},
  volume       = {236},
  year         = {2009},
}