TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates
(2009) In Journal of Microscopy 236(2). p.115-118- Abstract
- P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1505364
- author
- Dluzewski, P. ; Sadowski, Janusz LU ; Kret, S. ; Dabrowski, J. and Sobczak, K.
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- TEM, nanowires, GaMnAs, MBE
- in
- Journal of Microscopy
- volume
- 236
- issue
- 2
- pages
- 115 - 118
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- wos:000271049100007
- scopus:70350520386
- pmid:19903235
- ISSN
- 0022-2720
- DOI
- 10.1111/j.1365-2818.2009.03255.x
- language
- English
- LU publication?
- yes
- id
- bacc4d0e-b952-47cf-b6d0-cccae08e44ff (old id 1505364)
- date added to LUP
- 2016-04-01 14:10:59
- date last changed
- 2022-03-29 19:34:44
@article{bacc4d0e-b952-47cf-b6d0-cccae08e44ff, abstract = {{P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.}}, author = {{Dluzewski, P. and Sadowski, Janusz and Kret, S. and Dabrowski, J. and Sobczak, K.}}, issn = {{0022-2720}}, keywords = {{TEM; nanowires; GaMnAs; MBE}}, language = {{eng}}, number = {{2}}, pages = {{115--118}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Journal of Microscopy}}, title = {{TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates}}, url = {{http://dx.doi.org/10.1111/j.1365-2818.2009.03255.x}}, doi = {{10.1111/j.1365-2818.2009.03255.x}}, volume = {{236}}, year = {{2009}}, }